Influence of 1 MeV electron irradiation on the output parameters of silicon heterojunction solar cells

IF 1.4 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms Pub Date : 2025-01-31 DOI:10.1016/j.nimb.2025.165630

Sh.B. Utamuradova , E.I. Terukov , O.К. Ataboev , I.E. Panaiotti , R.R. Kabulov , A.V. Troshin

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引用次数: 0

Abstract

In this study, influence of electron irradiation with an energy 1 MeV on the output photovoltaic parameters of n-type silicon heterojunction solar cells has been investigated. It has been shown that when irradiated with electrons fluence of 5 × 10¹⁴ e/cm², a significant decrease in the quantum efficiency occurs at wavelengths of longer than 600 nm, leading to a decrease in the short-circuit current from 33.1 to 22 mA/cm² and the open-circuit voltage from 0.68 to 0.53 V, and at a fluence of 1 × 10¹⁵ e/cm² down to 18.3 mA/cm² and 0.51 V respectively. Moreover, the surface recombination velocities of ∼500 cm/s at 5 × 10¹⁴ e/cm² and ∼580 cm/s at 1 × 10¹⁵ e/cm² have been calculated from the load current–voltage characteristics, i.e., ∼16 cm/s before irradiation. Based on capacitance–voltage measurements decrease in charge carrier concentration from 10¹⁵ cm⁻³ to 8.15 × 10¹⁴ cm⁻³ in the bulk of a silicon heterojunction solar cells after electron irradiation at different fluences (

{ϕ = 10}^{15}

e/cm²), whereas the carrier removal rate of R_c ≈ 0.21 cm⁻¹ were calculated.

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来源期刊

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 物理-核科学技术

CiteScore

2.80

自引率

7.70%

发文量

231

审稿时长

1.9 months

期刊介绍： Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.