Investigation of interface, border and bulk traps of Al2O3/β-Ga2O3 MOS capacitors via O2 plasma treatment

IF 2.7 Q2 PHYSICS, CONDENSED MATTER
Song Du, Yuxiang Lin, Hao Xu, Hao Long
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引用次数: 0

Abstract

While Gallium Oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) hold great potential for high power applications, effective control of the MOS interface remains a subject of ongoing investigation. Previous studies always focused on interface traps, while overlooking the bulk and broader traps in dielectric layer. In this study, the effects of oxygen plasma treatment on the interface, border and bulk traps of Al2O3/β-Ga2O3 MOS capacitors were systematically investigated through high/low frequency C–V, hysteresis C–V, and forward-bias stress tests. The results showed that devices treated with 50 W plasma power for 1 min effectively passivated the interface dangling bonds and also improved the crystalline quality of Al2O3 dielectrics, exhibiting the lowest interface, border and bulk traps density. In contrast, excess plasma density or total treatment energy introduced etching defects, deteriorating the interface and dielectrics’ quality. The study demonstrates that appropriate oxygen plasma pretreatment provided an effective solution for the future application of high-performance β-Ga2O3 MOS devices.
O2等离子体处理Al2O3/β-Ga2O3 MOS电容器界面、边界和体阱的研究
虽然氧化镓(Ga2O3)金属氧化物半导体场效应晶体管(mosfet)在高功率应用中具有巨大的潜力,但对MOS接口的有效控制仍然是一个正在进行的研究课题。以往的研究多集中在界面圈闭上,而忽略了介电层的整体圈闭和宽圈闭。在本研究中,通过高/低频C-V、滞后C-V和正向偏压应力测试,系统地研究了氧等离子体处理对Al2O3/β-Ga2O3 MOS电容器界面、边界和体阱的影响。结果表明,50w等离子体功率处理1 min后,可以有效钝化界面悬垂键,提高Al2O3电介质的晶体质量,界面、边界和体阱密度最低。相反,过多的等离子体密度或总处理能量会导致蚀刻缺陷,使界面和电介质质量恶化。研究表明,适当的氧等离子体预处理为未来高性能β-Ga2O3 MOS器件的应用提供了有效的解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
6.50
自引率
0.00%
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