Localized surface plasmon enhanced the photoresponse performance of Ga2O3 ultraviolet photodetectors

IF 2.7 Q2 PHYSICS, CONDENSED MATTER
Shuang Zhang , Guoqing Zhang , Hui Wu , Zhen Cui
{"title":"Localized surface plasmon enhanced the photoresponse performance of Ga2O3 ultraviolet photodetectors","authors":"Shuang Zhang ,&nbsp;Guoqing Zhang ,&nbsp;Hui Wu ,&nbsp;Zhen Cui","doi":"10.1016/j.micrna.2024.208063","DOIUrl":null,"url":null,"abstract":"<div><div>The finite-difference time-domain method is employed in this study to analyze the influence of structural parameters on ultraviolet light absorption, and computer-aided design techniques are utilized to simulate the relevant characteristics of day-blind ultraviolet photodetectors. Two absorption structures are designed: metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub> and metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub>-metal layers. The second structure achieves an absorption peak intensity of over 0.95 in the ultraviolet region. By investigating the electric field at the resonance peak, localized surface plasmon resonance is found to occur at the interface between the nanoparticles and Ga<sub>2</sub>O<sub>3</sub>, significantly enhancing the absorption of photon energy by the nanoparticles, which benefits the design of ultraviolet photodetectors. Furthermore, a gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector is designed, and it is discovered that the responsivity and external quantum efficiency of the gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector can reach up to 4.13 A/W and 2276 %, respectively, with the gold nanoparticles and gold absorption layer significantly improving the device's optoelectronic performance. The effect of Ga<sub>2</sub>O<sub>3</sub> thickness on optoelectronic performance is also explored, showing that the detector's performance can be enhanced by adjusting the Ga<sub>2</sub>O<sub>3</sub> thickness.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208063"},"PeriodicalIF":2.7000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324003133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

Abstract

The finite-difference time-domain method is employed in this study to analyze the influence of structural parameters on ultraviolet light absorption, and computer-aided design techniques are utilized to simulate the relevant characteristics of day-blind ultraviolet photodetectors. Two absorption structures are designed: metal nanoparticles-Ga2O3 and metal nanoparticles-Ga2O3-metal layers. The second structure achieves an absorption peak intensity of over 0.95 in the ultraviolet region. By investigating the electric field at the resonance peak, localized surface plasmon resonance is found to occur at the interface between the nanoparticles and Ga2O3, significantly enhancing the absorption of photon energy by the nanoparticles, which benefits the design of ultraviolet photodetectors. Furthermore, a gold nanoparticle Ga2O3 photodetector is designed, and it is discovered that the responsivity and external quantum efficiency of the gold nanoparticle Ga2O3 photodetector can reach up to 4.13 A/W and 2276 %, respectively, with the gold nanoparticles and gold absorption layer significantly improving the device's optoelectronic performance. The effect of Ga2O3 thickness on optoelectronic performance is also explored, showing that the detector's performance can be enhanced by adjusting the Ga2O3 thickness.
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