Impact of hindrance and trap impurities on the sensitivity measurement of N-Pocket TFET based biosensor

Abstract

This work concentrated on the sensitivity assessment of the N-pocket TFET biosensor accounting for steric hindrance and interface trap effects. In this case, high-k gate oxide is positioned above the N+ pocket of the source regime to add a further tunneling component during the conduction mechanism. Additionally, the influence of interface charges and steric hindrance effects are assessed through the observation of the drain current (I_D), surface electro static potential (ѱ), current ratio (I_ON/I_OFF) and current sensitivity (S_ION). Further investigation is done by changing the length of cavity (L_C), thickness of cavity (T_C), drain voltage (V_DS), and position of biomolecules with respect to the sensing terminal. The effect of biomolecules on noise assessment parameters have also been studied on taking into consideration of non-idealistic effects. On considering steric hindrance and interface trap charges effects, streptavidin biomolecules report an error in sensitivity (67 %)_{No Trap} and (188.6 %)_Trap, respectively. Finally, the steric error estimation parameter of the supplied TFET biosensor is compared to the sensitivity of other FET-based biosensors described in publications.