Gate misalignment effect on electrical characteristics and comparison of Analog/RF performance parameters of triple metal dual gate vertical TFET

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2025-02-01 DOI:10.1016/j.micrna.2024.208048

Rohit R. Kumbhar, Rajesh Agarwal

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Abstract

During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment, which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observed effects on analog/RF parameters on the proposed structure, such as transconductance (g_m), output conductance (g_ds), intrinsic gain (A_VO), total gate capacitance (C_GG), and cut-off frequency (f_T), along with threshold voltage (V_Th) and sub-threshold slope (SS). The work focuses on the investigation of these parameters in three scenarios of gate misalignment: towards the drain, towards the source, and towards the drain and source with different probable percentages of misalignment. The results are analyzed by considering SiO₂ and HfO₂ as gate oxide materials.

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来源期刊

Micro and Nanostructures

CiteScore

6.50

自引率

0.00%

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