Performance investigation of neoteric Pt/Pd Junctionless gas tube FET(JL-GT-FET) as a Hydrogen(H2) gas sensor for industrial applications-analytical model

Abstract

In this manuscript, an analytical model has been proposed for Junctionless (JL) Nanotube Field Effect Transistor (FET) as a hydrogen sensor, being called as a Junctionless Gas Tube FET (JL-GT-FET). Palladium (Pd) and platinum (Pt) has been exploited as the catalytic metal gate and are compared for their performance metrics. The proposed sensor, works on the principle that the pressure on the catalytic metal gate will be altered by the change in the concentration of gas molecules which in turn modulates the work-function of the metal gate. Thus, it can rightly be inferred that the change in the work-function of the metal is being used to detect the presence of hydrogen gas molecules. The performance parameters being analyzed are threshold voltage, electric field, surface potential, drain current, Transconductance, output conductance and sensitivity. Here, in this manuscript, an analytical model has also been developed for Junctionless Gas Tube FET (JL-GT-FET) as a hydrogen sensor. The Junctionless Gas FET based sensor has been compared with Nanowire FET under similar pressure and catalytic conditions. It has been established that the Junctionless Gas Tube FET exhibits much higher efficiency in sensing the pressure variations. Also, it has been established that the modeling so obtained by solving the 2-D Poisson equation with appropriate boundary conditions for the Junctionless Gas Tube FET are much in coherence with the results so obtained by simulating the device structure on the Atlas 3-D device simulator.