Dual doped ring reconfigurable FET and its process variation analysis using random forest algorithm

Abstract

This work combines three concepts, (i) reconfigurability, (ii) dual doped source-drain, and (iii) Ring FET to propose dual doped ring reconfigurable FET (D²R²FET). The proposed device concept has been demonstrated through DC and AC numerical device simulations. Its performance has been optimized by adjusting the source radius. Additionally, the device has also been studied for process variation impact using random forest algorithm. We have the following findings from the above studies, (i) source at the centre of structure offers better drive current compared to the drain at the centre structure, and (ii) Proposed device offers AC performance (unity gain cut-off frequency of 554Hz). Apart from these, the process variation study finds out the channel height (or epi-layer) and control gate work function as the most significant parameters.