A 2.69-ppm/°C curvature-compensated BJT-based bandgap voltage reference

Abstract

This research presents a BJT-based bandgap reference circuit, aiming to minimize the temperature coefficient and active area for low-power and compact applications. A curvature compensation technique is introduced to enhance the temperature coefficient and extend the operational temperature range. The proposed BGR, simulated using a 0.18-μm CMOS process, demonstrates a simulated reference voltage of 0.269 V and TC of 2.69 ppm/°C for the reference output across a wide temperature range of −50 °C–150 °C. Furthermore, the proposed circuit occupies a compact silicon area of 0.0054 mm², shows a line regulation 0.46 %/V, and consumes a power of 22.07 μW at 25 °C. The proposed bandgap reference circuit well-suited for providing reference voltages in various integrated circuits, particularly in high-precision low-power applications.