Dual-mode reconfigurable dopingless transistor: A novel device structure

IF 2.7 Q2 PHYSICS, CONDENSED MATTER
Rohan Rohidas Naik , Lokesh Kumar Bramhane , T. Veerakumar , Amol D. Rahulkar , Jawar Singh
{"title":"Dual-mode reconfigurable dopingless transistor: A novel device structure","authors":"Rohan Rohidas Naik ,&nbsp;Lokesh Kumar Bramhane ,&nbsp;T. Veerakumar ,&nbsp;Amol D. Rahulkar ,&nbsp;Jawar Singh","doi":"10.1016/j.micrna.2024.208065","DOIUrl":null,"url":null,"abstract":"<div><div>A novel device structure is proposed in this paper that can function as an Extruded Base-Gate Bipolar Charge Plasma Transistor (EBG-BCPT) when the emitter terminal is grounded. Additionally, this same structure can also be configured as an Extruded Source-Gate Dopingless Tunnel Field Effect Transistor (ESG-DL-TFET) when the emitter terminal is at a higher or positive potential. The addition of a gate electrode to the conventional device (EB-BCPT) enhances control over the base width, leading to more efficient control over the cut-off frequency and current gain of the proposed device EBG-BCPT. In contrast, when the emitter terminal is maintained at a high potential, the ESG-DL-TFET exhibits tunneling effects, resulting in subthreshold conduction and suppressed ambipolar current. 2D TCAD simulations for the EBG-BCPT demonstrate a remarkable increase in peak current gain of<span><math><mo>≈</mo></math></span>1000 times along with a cut-off frequency boost of <span><math><mo>≈</mo></math></span>10 GHz compared to the conventional EB-BCPT. Additionally, the ESG-DL-TFET shows a subthreshold slope of 53.81 mV/dec while fully suppressing ambipolar current when compared to conventional DL-TFETs. The EBG-BCPT is suited for high-frequency analog circuits requiring adjustable gain and frequency, while the ESG-DL-TFET’s suppressed ambipolar current makes it ideal for low-power digital circuits in energy-efficient computing. The proposed device structure is suitable candidate for Bi-FET technology due to its reconfigurability.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208065"},"PeriodicalIF":2.7000,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324003157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

Abstract

A novel device structure is proposed in this paper that can function as an Extruded Base-Gate Bipolar Charge Plasma Transistor (EBG-BCPT) when the emitter terminal is grounded. Additionally, this same structure can also be configured as an Extruded Source-Gate Dopingless Tunnel Field Effect Transistor (ESG-DL-TFET) when the emitter terminal is at a higher or positive potential. The addition of a gate electrode to the conventional device (EB-BCPT) enhances control over the base width, leading to more efficient control over the cut-off frequency and current gain of the proposed device EBG-BCPT. In contrast, when the emitter terminal is maintained at a high potential, the ESG-DL-TFET exhibits tunneling effects, resulting in subthreshold conduction and suppressed ambipolar current. 2D TCAD simulations for the EBG-BCPT demonstrate a remarkable increase in peak current gain of1000 times along with a cut-off frequency boost of 10 GHz compared to the conventional EB-BCPT. Additionally, the ESG-DL-TFET shows a subthreshold slope of 53.81 mV/dec while fully suppressing ambipolar current when compared to conventional DL-TFETs. The EBG-BCPT is suited for high-frequency analog circuits requiring adjustable gain and frequency, while the ESG-DL-TFET’s suppressed ambipolar current makes it ideal for low-power digital circuits in energy-efficient computing. The proposed device structure is suitable candidate for Bi-FET technology due to its reconfigurability.
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
6.50
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信