Rohan Rohidas Naik , Lokesh Kumar Bramhane , T. Veerakumar , Amol D. Rahulkar , Jawar Singh
{"title":"Dual-mode reconfigurable dopingless transistor: A novel device structure","authors":"Rohan Rohidas Naik , Lokesh Kumar Bramhane , T. Veerakumar , Amol D. Rahulkar , Jawar Singh","doi":"10.1016/j.micrna.2024.208065","DOIUrl":null,"url":null,"abstract":"<div><div>A novel device structure is proposed in this paper that can function as an Extruded Base-Gate Bipolar Charge Plasma Transistor (EBG-BCPT) when the emitter terminal is grounded. Additionally, this same structure can also be configured as an Extruded Source-Gate Dopingless Tunnel Field Effect Transistor (ESG-DL-TFET) when the emitter terminal is at a higher or positive potential. The addition of a gate electrode to the conventional device (EB-BCPT) enhances control over the base width, leading to more efficient control over the cut-off frequency and current gain of the proposed device EBG-BCPT. In contrast, when the emitter terminal is maintained at a high potential, the ESG-DL-TFET exhibits tunneling effects, resulting in subthreshold conduction and suppressed ambipolar current. 2D TCAD simulations for the EBG-BCPT demonstrate a remarkable increase in peak current gain of<span><math><mo>≈</mo></math></span>1000 times along with a cut-off frequency boost of <span><math><mo>≈</mo></math></span>10 GHz compared to the conventional EB-BCPT. Additionally, the ESG-DL-TFET shows a subthreshold slope of 53.81 mV/dec while fully suppressing ambipolar current when compared to conventional DL-TFETs. The EBG-BCPT is suited for high-frequency analog circuits requiring adjustable gain and frequency, while the ESG-DL-TFET’s suppressed ambipolar current makes it ideal for low-power digital circuits in energy-efficient computing. The proposed device structure is suitable candidate for Bi-FET technology due to its reconfigurability.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208065"},"PeriodicalIF":2.7000,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012324003157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
A novel device structure is proposed in this paper that can function as an Extruded Base-Gate Bipolar Charge Plasma Transistor (EBG-BCPT) when the emitter terminal is grounded. Additionally, this same structure can also be configured as an Extruded Source-Gate Dopingless Tunnel Field Effect Transistor (ESG-DL-TFET) when the emitter terminal is at a higher or positive potential. The addition of a gate electrode to the conventional device (EB-BCPT) enhances control over the base width, leading to more efficient control over the cut-off frequency and current gain of the proposed device EBG-BCPT. In contrast, when the emitter terminal is maintained at a high potential, the ESG-DL-TFET exhibits tunneling effects, resulting in subthreshold conduction and suppressed ambipolar current. 2D TCAD simulations for the EBG-BCPT demonstrate a remarkable increase in peak current gain of1000 times along with a cut-off frequency boost of 10 GHz compared to the conventional EB-BCPT. Additionally, the ESG-DL-TFET shows a subthreshold slope of 53.81 mV/dec while fully suppressing ambipolar current when compared to conventional DL-TFETs. The EBG-BCPT is suited for high-frequency analog circuits requiring adjustable gain and frequency, while the ESG-DL-TFET’s suppressed ambipolar current makes it ideal for low-power digital circuits in energy-efficient computing. The proposed device structure is suitable candidate for Bi-FET technology due to its reconfigurability.