Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2025-01-10 DOI:10.1016/j.micrna.2025.208073

Yicong Deng, Desen Chen, Titao Li, Minmin Zhu, Xiaorui Xu, Haizhong Zhang, Xiaoqiang Lu

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引用次数: 0

Abstract

Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of β-Ga₂O₃ thin film to enhance the power figure of merit of β-Ga₂O₃ Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of β-Ga₂O₃ SBDs could be modified by varying the ratios of BCl₃ and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of β-Ga₂O₃ epitaxial layer, the β-Ga₂O₃ SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 mΩ·cm² and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance β-Ga₂O₃ power SBDs.

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优化的电感耦合等离子体（ICP）刻蚀工艺可以改善β-Ga2O3薄膜的表面质量，提高β-Ga2O3肖特基势垒二极管（sdd）的功率优值。然而，提高ICP刻蚀表面质量的机理尚不清楚。在这篇论文中，我们证实了β-Ga2O3 sbd的表面质量可以通过改变BCl3和Ar刻蚀等离子体的比例来改变。并进行了电性能测试，验证了表面质量的改善可以提高电性能。得益于β-Ga2O3外延层的高表面质量，无端接结构的β-Ga2O3 SBD具有4 mΩ·cm2的低导通电阻（Ron,sp）和1500 V的高击穿电压（BV）。这些结果为制备高性能β-Ga2O3功率固态硬盘奠定了基础。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Micro and Nanostructures

CiteScore

6.50

自引率

0.00%

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