Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2025-01-10 DOI:10.1016/j.micrna.2025.208073

Yicong Deng, Desen Chen, Titao Li, Minmin Zhu, Xiaorui Xu, Haizhong Zhang, Xiaoqiang Lu

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引用次数: 0

Abstract

Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of β-Ga₂O₃ thin film to enhance the power figure of merit of β-Ga₂O₃ Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of β-Ga₂O₃ SBDs could be modified by varying the ratios of BCl₃ and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of β-Ga₂O₃ epitaxial layer, the β-Ga₂O₃ SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 mΩ·cm² and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance β-Ga₂O₃ power SBDs.

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来源期刊

Micro and Nanostructures

CiteScore

6.50

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0.00%

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