Ultra-wide range infrared photodetector based on BP/MoSe2 heterojunction

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2025-01-28 DOI:10.1016/j.micrna.2025.208081

Beiyun Liu , Chengjie Zhi , Guanxia Dai , Boxing An , Feihong Chu , Jicheng Mo , Xiuyan Zhang

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Abstract

Two-dimensional (2D) materials based photodetectors is a hot research field in recent years, especially black phosphorus (BP), which has been favored by researchers due to its benign properties of direct bandgap and bandgap of only 0.3 eV. However, devices based on BP only have low photoresponsivity and the material is prone to degradation, which is not conducive to their research in photodetectors. We constructed a BP and molybdenum molybdenum diselenide (MoSe₂) heterojunction photodetector by depositing electrodes and then transferring materials using a dry transfer method. A pn junction is formed by p-type BP and n-type MoSe₂, which generates a built-in electric field that helps to separate the photogenerated electron-hole pairs and improve the efficiency of photo detection. The device has a maximum photoresponsivity and specific detectivity of 0.167 A/W and 1.2 × 10¹⁰ Jones at V_ds = 1 V, V_g = 0 V. The range of photo detection can be from 450 to 2400 nm. Our work has a positive impact on the research of two-dimensional material heterojunctions for infrared photodetectors.

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来源期刊

Micro and Nanostructures

CiteScore

6.50

自引率

0.00%

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