Numerical probing into the role of experimentally developed ZnTe window layer in high-performance Ag3AuSe2 photodetector

Results in Materials Pub Date : 2024-12-15 DOI:10.1016/j.rinma.2024.100651

Sheikh Noman Shiddique , Ahnaf Tahmid Abir , Syeda Samiha Nushin , Bipanko Kumar Mondal , Jaker Hossain

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Abstract

In this work, a comprehensive investigation is performed to design a high-performance Ag₃AuSe₂ (Fischesserite) NIR photodetector (PD) with experimentally synthesized ZnTe window and AgCuS as a back surface field (BSF) layers. The ZnTe window layer has been successfully fabricated through spin coating method utilizing thiol-amine co-solvents. This technique yields a notable Bandgap of 2.5 eV for ZnTe thin film. The role of different parameters of each layer such as depth, doping, and defect density are investigated in order to determine how they affect the performance. The Ag₃AuSe₂ PD exhibits excellent results with an amazing photocurrent (J_SC) of 45.7 mA/cm², V_OC of 0.86 V, responsivity of 0.78 AW^-1, detectivity of 3.65 × 10¹⁵ Jones. Because of these superior features and customized design, the Ag₃AuSe₂ PD with ZnTe transport layer shown in this study holds great potential for use in optoelectronic applications in the future.

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实验开发的ZnTe窗口层在高性能ag3aus2光电探测器中的作用的数值探讨

本文采用实验合成的ZnTe窗口和agcu作为后表面场（BSF）层，设计了高性能Ag3AuSe2 （Fischesserite）近红外探测器（PD）。利用巯基胺共溶剂，通过旋涂法制备了ZnTe窗口层。该技术可使ZnTe薄膜产生2.5 eV的显著带隙。研究了每一层的不同参数（如深度、掺杂和缺陷密度）的作用，以确定它们如何影响性能。Ag3AuSe2 PD具有优异的光电流（JSC）为45.7 mA/cm2， VOC为0.86 V，响应率为0.78 AW-1，探测率为3.65 × 1015 Jones。由于这些优越的特性和定制的设计，本研究中显示的具有ZnTe传输层的Ag3AuSe2 PD在未来的光电应用中具有巨大的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Results in Materials

CiteScore

5.30

自引率

0.00%

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