Xuehui Gu , Na Wang , Liping Zhang , Jian Yu , Ning Tang , Xiaohua Xu , Su Zhou , Anjun Han , Jianhua Shi , Junlin Du , Guangyuan Wang , Wenjie Zhao , Fanying Meng , Zhengxin Liu , Wenzhu Liu
{"title":"Comprehensive consideration of light soaking improvement for silicon heterojunction solar cells","authors":"Xuehui Gu , Na Wang , Liping Zhang , Jian Yu , Ning Tang , Xiaohua Xu , Su Zhou , Anjun Han , Jianhua Shi , Junlin Du , Guangyuan Wang , Wenjie Zhao , Fanying Meng , Zhengxin Liu , Wenzhu Liu","doi":"10.1016/j.solmat.2025.113421","DOIUrl":null,"url":null,"abstract":"<div><div>Monocrystalline/Amorphous silicon heterojunction (SHJ) solar cells exhibit improved power conversion efficiency (<em>PCE</em>) by virtue of light soaking (LS), because photons activate effective doping of B/P atoms by promoting the movement of metastable H atoms in the amorphous silicon (a-Si:H) network. In this article, a comprehensive consideration of irradiation intensity, temperature and time duration on the LS enhancement are further investigated. We propose the necessity of thermal assistance for LS, it not only provides more phonon-assisted movement of weak bonding H, but also reduces the disorder and defect density of a-Si:H films via decreasing the weakly bonded H concentration and changing the Si-H bond configuration. Thermally-assisted light soaking also improves the electrical property and field passivation property of doped a-Si:H and strengthens a-Si:H/c-Si heterogeneous interfaces. However, very high temperature or persistent heating decreases cell performance caused by degradation of chemical passivation. In our experiment, the optimal gain of <em>PCE</em> of 0.33%<sub>abs</sub> is obtained through a brief LS at 7000 W/m<sup>2</sup> irradiation intensity under 135 °C for 60 s.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"282 ","pages":"Article 113421"},"PeriodicalIF":6.3000,"publicationDate":"2025-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Energy Materials and Solar Cells","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927024825000224","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0
Abstract
Monocrystalline/Amorphous silicon heterojunction (SHJ) solar cells exhibit improved power conversion efficiency (PCE) by virtue of light soaking (LS), because photons activate effective doping of B/P atoms by promoting the movement of metastable H atoms in the amorphous silicon (a-Si:H) network. In this article, a comprehensive consideration of irradiation intensity, temperature and time duration on the LS enhancement are further investigated. We propose the necessity of thermal assistance for LS, it not only provides more phonon-assisted movement of weak bonding H, but also reduces the disorder and defect density of a-Si:H films via decreasing the weakly bonded H concentration and changing the Si-H bond configuration. Thermally-assisted light soaking also improves the electrical property and field passivation property of doped a-Si:H and strengthens a-Si:H/c-Si heterogeneous interfaces. However, very high temperature or persistent heating decreases cell performance caused by degradation of chemical passivation. In our experiment, the optimal gain of PCE of 0.33%abs is obtained through a brief LS at 7000 W/m2 irradiation intensity under 135 °C for 60 s.
期刊介绍:
Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.