{"title":"Effects of introducing indium in ternary alloy based optical field guiding layer around active region for deep UV laser emission","authors":"Kashish Sapra , Indrani Mazumder , Ashok Chauhan , Kuldip Singh , Manish Mathew","doi":"10.1016/j.jlumin.2025.121078","DOIUrl":null,"url":null,"abstract":"<div><div>In this simulation study, we investigate the impact of Indium Nitride content in the Aluminium Nitride-rich waveguide section of an ultraviolet laser diode that emits around 271 nm wavelength. In the laser diode, carrier confinement and optical confinement dictate output characteristics. These factors can be controlled through effective material engineering, and dopant activation as described in this paper. We plan to address the issue of confinement by introducing indium nitride in the molar fraction varying in small increments and observing the resulting modulation in device properties. The laser output power of the proposed structures increased approximately thrice when indium nitride content changed by 0.04 molar fraction percentage in Al<sub>x</sub>In<sub>y</sub>Ga<sub>(1-x-y)</sub>N based waveguide. In the device with 0.04 indium nitride molar fraction-based waveguide on both sides, the power amplified from 22 mW to roughly 66 mW at a 1 A injection current. Besides, this arrangement helped in confining the optical field around the active region as well.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"280 ","pages":"Article 121078"},"PeriodicalIF":3.3000,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Luminescence","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022231325000183","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
In this simulation study, we investigate the impact of Indium Nitride content in the Aluminium Nitride-rich waveguide section of an ultraviolet laser diode that emits around 271 nm wavelength. In the laser diode, carrier confinement and optical confinement dictate output characteristics. These factors can be controlled through effective material engineering, and dopant activation as described in this paper. We plan to address the issue of confinement by introducing indium nitride in the molar fraction varying in small increments and observing the resulting modulation in device properties. The laser output power of the proposed structures increased approximately thrice when indium nitride content changed by 0.04 molar fraction percentage in AlxInyGa(1-x-y)N based waveguide. In the device with 0.04 indium nitride molar fraction-based waveguide on both sides, the power amplified from 22 mW to roughly 66 mW at a 1 A injection current. Besides, this arrangement helped in confining the optical field around the active region as well.
期刊介绍:
The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid.
We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.