Design and photoresponse characteristics of dilithium phthalocyanine nanowires

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-01-25 DOI:10.1016/j.jcrysgro.2025.128072

Yanshu Shi , Mengke Guo , Xuekun Wang , Yiqian Wang , Jile Wang , Xiaoyun Qin , Yumin Song , Tingting Guo

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引用次数: 0

Abstract

Nanoscale crystal materials have received much attention in the field of photodetection due to their unique physical and chemical properties. In this study, dilithium phthalocyanine nanowires (Li₂Pc NWs) were grown by physical vapor deposition (PVD) in the relatively high temperature region. The diffraction peak positions and crystal parameters are reported for the first time. Photoresponse tests showed that the Li₂Pc NWs displayed stronger variations in photodark currents than the raw materials at both 0.5–10 V bias voltages and 395–850 nm irradiation wavelengths. The photoresponsivity of the Li₂Pc NWs was enhanced with increasing voltage, reaching a maximum photoresponsivity of 2.53 × 10⁻⁵ A·W⁻¹ at 10 V and 2.61 × 10⁻⁶ A·W⁻¹ at 455 nm. The unique crystal structure and good photoresponse indicate that Li₂Pc NWs have the potential to be applied in the field of photodetection, which provides new possibilities for their development.

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酞菁二锂纳米线的设计与光响应特性

纳米晶体材料以其独特的物理化学性质在光探测领域受到广泛关注。在本研究中，采用物理气相沉积（PVD）方法在相对高温区域生长了酞菁二锂纳米线（li2pcnws）。本文首次报道了衍射峰位置和晶体参数。光响应测试表明，在0.5 ~ 10 V偏置电压和395 ~ 850 nm辐照波长下，Li2Pc NWs的光暗电流变化比原料更大。Li2Pc NWs的光响应率随着电压的增加而增强，在10 V和455 nm处的光响应率分别达到2.53 × 10−5 a·W−1和2.61 × 10−6 a·W−1。独特的晶体结构和良好的光响应表明Li2Pc NWs具有应用于光探测领域的潜力，这为其发展提供了新的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.