Silicon photonic integrated wideband radio frequency self-interference cancellation chip for over-the-air in-band full-duplex communication

Chip Pub Date : 2024-12-01 DOI:10.1016/j.chip.2024.100114
Xinxin Su , Meng Chao , Xiuyou Han , Han Liang , Wenfu Zhang , Shuanglin Fu , Weiheng Wang , Mingshan Zhao
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Abstract

Compared with the traditional frequency division duplex and time division duplex, the in-band full-duplex (IBFD) technology can double the spectrum utilization efficiency and information transmission rate. However, radio frequency (RF) self-interference remains a key issue to be resolved for the application of IBFD. The photonic RF self-interference cancellation (SIC) scheme is endowed with the advantages of wide bandwidth, high amplitude and time delay tuning precision, and immunity to electromagnetic interference. To meet the requirements of the new generation of mobile terminals and satellite payloads, the photonic RF SIC system is desired to be miniaturized, integrated, and low power consumption. In this study, the integrated photonic RF SIC scheme was proposed and demonstrated on a silicon-based platform. By utilizing the opposite bias points of the on-chip dual Mach-Zehnder modulators, the phase inversion relationship for SIC was realized over a broad frequency band. The time delay structure combining the optically switched waveguide and compact spiral waveguide enables continuous tuning of time over a wide bandwidth. The optical amplitude adjuster provides efficient amplitude control with a large dynamic range. After being packaged with optical, direct current, and RF design, the photonic RF SIC chip exhibits the interference cancellation capabilities across L, S, C, X, Ku, K, and Ka bands. In the S and C bands, a cancellation depth exceeding 20 dB was measured across a bandwidth of 4.8 GHz. An impressive cancellation depth of over 40 dB was achieved within a bandwidth of 80 MHz at a central frequency of 2 GHz. For the application of over-the-air IBFD communication at the newly promulgated center frequency of 6 GHz for 5G communication, the cancellation depth of 21.7 dB was demonstrated in the bandwidth of 100 MHz, and the low-power signals of interest were recovered successfully.
用于空中带内全双工通信的硅光子集成宽带射频自干扰消除芯片
与传统的分频双工和时分双工相比,带内全双工(IBFD)技术可以使频谱利用效率和信息传输速率提高一倍。然而,射频自干扰仍然是IBFD应用中需要解决的关键问题。光子射频自干扰抵消(SIC)方案具有带宽宽、振幅和时延调谐精度高、抗电磁干扰等优点。为满足新一代移动终端和卫星有效载荷的要求,光子射频SIC系统向着小型化、集成化、低功耗的方向发展。在本研究中,提出了集成光子射频SIC方案,并在硅基平台上进行了验证。利用片上双马赫-曾德尔调制器的反向偏置点,实现了SIC在宽频段内的相位反转关系。结合光开关波导和紧凑螺旋波导的时间延迟结构可以在宽带宽上连续调谐时间。光学调幅器提供了有效的幅度控制与大的动态范围。在采用光学、直流和射频设计封装后,光子RF SIC芯片在L、S、C、X、Ku、K和Ka波段显示出干扰消除能力。在S和C波段,在4.8 GHz的带宽上测量到超过20 dB的消去深度。在2 GHz的中心频率下,在80 MHz的带宽内实现了超过40 dB的令人印象深刻的消去深度。针对新颁布的5G通信中心频率为6ghz的无线IBFD通信应用,在100mhz带宽下演示了21.7 dB的对消深度,成功恢复了感兴趣的低功率信号。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
2.80
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