{"title":"Research on modeling and prediction method of conducted electromagnetic interference for electric vehicle on-board charging system","authors":"Kai Zhou, Xiandong Ding, Zhipeng Xu","doi":"10.1016/j.vlsi.2024.102339","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, the conducted electromagnetic interference (EMI) prediction of two-stage cascade vehicle charging system is studied. Based on the analysis of the influence of parasitic capacitance on the EMI generated by on silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) and its propagation path, a simplified SiC MOSFET model with only parasitic capacitance is proposed. This model is used to predict the EMI of the system. In order to accurately simulate the working characteristics of the vehicle charging system, and by using the computational simulation method, the model of other components is established, the related parasitic parameters are extracted, and the whole system simulation and prediction model is constructed. On the basis of simulation research, the experimental platform of vehicle charging system is built, and the EMI experiment is verified by referring to relevant standards. Compared with the complete model, the simplified model can improve the speed of EMI prediction.</div></div>","PeriodicalId":54973,"journal":{"name":"Integration-The Vlsi Journal","volume":"101 ","pages":"Article 102339"},"PeriodicalIF":2.2000,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integration-The Vlsi Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167926024002037","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the conducted electromagnetic interference (EMI) prediction of two-stage cascade vehicle charging system is studied. Based on the analysis of the influence of parasitic capacitance on the EMI generated by on silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) and its propagation path, a simplified SiC MOSFET model with only parasitic capacitance is proposed. This model is used to predict the EMI of the system. In order to accurately simulate the working characteristics of the vehicle charging system, and by using the computational simulation method, the model of other components is established, the related parasitic parameters are extracted, and the whole system simulation and prediction model is constructed. On the basis of simulation research, the experimental platform of vehicle charging system is built, and the EMI experiment is verified by referring to relevant standards. Compared with the complete model, the simplified model can improve the speed of EMI prediction.
期刊介绍:
Integration''s aim is to cover every aspect of the VLSI area, with an emphasis on cross-fertilization between various fields of science, and the design, verification, test and applications of integrated circuits and systems, as well as closely related topics in process and device technologies. Individual issues will feature peer-reviewed tutorials and articles as well as reviews of recent publications. The intended coverage of the journal can be assessed by examining the following (non-exclusive) list of topics:
Specification methods and languages; Analog/Digital Integrated Circuits and Systems; VLSI architectures; Algorithms, methods and tools for modeling, simulation, synthesis and verification of integrated circuits and systems of any complexity; Embedded systems; High-level synthesis for VLSI systems; Logic synthesis and finite automata; Testing, design-for-test and test generation algorithms; Physical design; Formal verification; Algorithms implemented in VLSI systems; Systems engineering; Heterogeneous systems.