The effect of DC bias and fast-rise pulse voltage on delayed impact ionization in a silicon diode structure

Abstract

A new method for the comprehensive characterization of the picosecond-range switching process in semiconductor structures biased with a high DC voltage and triggered by a fast-rise voltage pulse has been proposed. The delayed impact ionization and switching of a p⁺-n-n⁺ silicon diode structure with 500 μm thick base layer were investigated. Experiments demonstrated an improvement in the switching characteristics with an increase in both the DC reverse bias and the fast-rise steep pulse. A voltage rise rate of up to 43 kV/ns was recorded, which was formed by a single diode based switch.