{"title":"Heteroepitaxial growth of PMN-PT thin films on SrTiO3 buffered III-V semiconductor GaAs by pulsed laser deposition","authors":"Xiaona Du , Xin Ning","doi":"10.1016/j.jcrysgro.2025.128070","DOIUrl":null,"url":null,"abstract":"<div><div>Relaxor ferroelectric Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-PbTiO<sub>3</sub> (PMN-PT) thin films were epitaxially grown on (001)-oriented SrTiO<sub>3</sub> buffered III-V semiconductor GaAs substrates by pulsed laser deposition. Detailed microstructural investigations of the films were carried out using X-ray diffraction, atomic force microscopy and transmission electron microscopy. Local piezoresponse force microscopy hysteresis loops confirm the ferroelectric nature of the PMN-PT thin films on GaAs. The results have demonstrated the practicality of integrating epitaxial PMN-PT films on semiconductor GaAs, which may pave the way to develop III-V semiconductor based opto-mechanical devices.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"653 ","pages":"Article 128070"},"PeriodicalIF":1.7000,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024825000181","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
Relaxor ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films were epitaxially grown on (001)-oriented SrTiO3 buffered III-V semiconductor GaAs substrates by pulsed laser deposition. Detailed microstructural investigations of the films were carried out using X-ray diffraction, atomic force microscopy and transmission electron microscopy. Local piezoresponse force microscopy hysteresis loops confirm the ferroelectric nature of the PMN-PT thin films on GaAs. The results have demonstrated the practicality of integrating epitaxial PMN-PT films on semiconductor GaAs, which may pave the way to develop III-V semiconductor based opto-mechanical devices.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.