Growth of brucite (Mg(OH)2) on portlandite (Ca(OH)2)

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-01-18 DOI:10.1016/j.jcrysgro.2025.128071

I. Galan , C. Baumann , M. Sakoparnig , C. Grengg , M. Dietzel

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引用次数: 0

Abstract

The potential protective effect of brucite (Mg(OH)₂) grown on portlandite (Ca(OH)₂) was analysed. Single crystals of portlandite were synthesized and exposed to Mg²⁺-containing solutions and the influence of the central parameters was analysed: (i) magnesium ion source (MgCl₂ and MgSO₄) (ii) initial Mg²⁺ concentration (0.01–1 mol/l), (iii) crystal surface to solution volume ratio, and (iv) duration of experiment. Solids and solutions were characterised by means of FTIR, ICP-OES, pH measurements, SEM and EPMA. Additionally, thermodynamic calculations were performed. The results showed that the morphology and thickness and thus the protective properties of the brucite layer were conditioned by the Mg²⁺ and Ca²⁺ concentration in the solution. Brucite layers grown during exposure to higher initial Mg²⁺ concentration were denser and thinner, offering better protection against further dissolution. In MgCl₂ solutions, the precipitation of a compact brucite layer was accompanied by the formation of an empty cavity between brucite and portlandite. In MgSO₄ solutions the space between brucite and portlandite was filled with gypsum as saturation conditions were reached providing extra protection but also leading to potential crack formation in the brucite layer.

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.