Structural Modifications for Tuning Performance and Operational Modes in n-Type Organic Electrochemical Transistors

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Xinru Liu, Yu Xiao, Chaoyi Yan, Pengcheng Du, Fengjiao Zhang* and Hanshen Xin*, 
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Abstract

Organic mixed ionic–electronic conductors (OMIECs) are crucial in defining the operational modes and performance of organic electrochemical transistors (OECTs). However, studies on the design and structure–performance correlations of small-molecule n-type OMIECs remain scarce. Herein, we designed and synthesized a series of naphthalene diimide (NDI)–based n-type small molecules by extending π-conjugation and increasing the number of electron-withdrawing groups, achieving performance optimization and even changes in operational modes through structural regulations. OECTs based on 4Br-NDI-3EG exhibit a low threshold voltage of −0.022 V, which is the lowest reported for n-type channel materials to date. NDI-DTYA-3EG, synthesized through π-expansion of 4Br-NDI-3EG, maintains a low threshold voltage of −0.041 V and achieves 2 orders of magnitude improvement in electron mobility (1.04 × 10–2 cm2 V–1 s–1) owing to its mixed edge-on and face-on orientation. Specifically, by further increasing the number of electron-withdrawing groups, NDI-DTYM-3EG attains a sufficiently low LUMO energy level (−4.51 eV), enabling a spontaneous reduction in 0.1 M NaCl solution without external bias, thereby achieving self-doping. Consequently, it exhibits n-depletion-mode characteristics with a transconductance value of 287 μS. Moreover, devices made with NDI-DTYM-3EG show exceptional stability, retaining 98% of the initial drain current after 150 min operation. These results provide insights into the understanding and design of n-type mixed ionic–electronic conductor materials.

Abstract Image

n型有机电化学晶体管调谐性能和工作模式的结构改进
有机混合离子电子导体(OMIECs)是确定有机电化学晶体管(OECTs)工作模式和性能的关键。然而,关于小分子n型omiec的设计和结构-性能相关性的研究仍然很少。本文通过扩展π共轭和增加吸电子基团的数量,设计合成了一系列萘二亚胺(NDI)基n型小分子,通过结构调控实现了性能优化甚至操作模式的改变。基于4Br-NDI-3EG的oect具有- 0.022 V的低阈值电压,这是迄今为止报道的n型通道材料的最低阈值电压。将4Br-NDI-3EG π-膨胀合成的NDI-DTYA-3EG,由于其边对和面对混合取向,保持了- 0.041 V的低阈值电压,电子迁移率提高了2个数量级(1.04 × 10-2 cm2 V - 1 s-1)。具体来说,通过进一步增加吸电子基团的数量,NDI-DTYM-3EG获得了足够低的LUMO能级(- 4.51 eV),能够在0.1 M NaCl溶液中自发还原,没有外部偏压,从而实现自掺杂。因此,它具有n耗尽模式特性,跨导值为287 μS。此外,用NDI-DTYM-3EG制成的器件表现出优异的稳定性,在运行150分钟后保持98%的初始漏极电流。这些结果为理解和设计n型混合离子电子导体材料提供了新的思路。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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