A Versatile Route for Converting n-Type ZnO into p-Type: Phosphorus Doping of Nanostructures and Powders

Abstract

The progress in semiconductor technology necessitates the fundamental achievement of a p/n homojunction. However, the absence of a straightforward method for generating p-type ZnO hampers the development of this promising material. This study introduces a practical and viable strategy for converting n-type ZnO thin film/nanostructures of any shape into a p-type structure through phosphorus doping. In this research, intrinsic n-type ZnO nanowires were grown on a glass substrate using the conventional hydrothermal method at a low temperature, followed by transformation to p-type through postannealing. Transport measurements of a nanowire field-effect transistor and positive piezoelectric responses observed through conductive atomic force microscopy (AFM) in contact mode demonstrate the prevalence of holes in conductivity. Furthermore, commercial ZnO powder is subjected to p-type conversion and subsequently sintered into a bulk material, showcasing the versatility of this strategy in producing p-type ZnO nanomaterials through various growth methods. This approach not only propels the advancement of ZnO-based electronics but also proves its efficacy in materials science research. We believe that this study holds significance not only in the materials science domain but also promises advancements in electronics and optoelectronics.