{"title":"Insulated gate unipolar diode","authors":"Iraj Sheikhian","doi":"10.1049/ell2.70154","DOIUrl":null,"url":null,"abstract":"<p>Here, for the first time, a gated diode that can be turned on/off by its single insulated gate is introduced. The novel device is a combination of a metal-oxide-semiconductor field-effect transistor (MOSFET) and a diode. It has a simple structure and can be fabricated by the regular complementary metal-oxide-semiconductor (CMOS) technology at low cost. The insulated-gate unipolar diode (IGUD) is simulated by device simulator tools. Simulations show the output curve of the IGUD is not only similar to a regular diode but also can be shifted by the gate. The idea of IGUD has been evaluated by experimental tests. The experimental data are in good agreement with the simulation results. The IGUD can be used as a fast switch in high-current low-voltage applications. Also, it can be used to achieve controlled rectification without synchronisation to the AC input.</p>","PeriodicalId":11556,"journal":{"name":"Electronics Letters","volume":"61 1","pages":""},"PeriodicalIF":0.7000,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70154","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics Letters","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/ell2.70154","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Here, for the first time, a gated diode that can be turned on/off by its single insulated gate is introduced. The novel device is a combination of a metal-oxide-semiconductor field-effect transistor (MOSFET) and a diode. It has a simple structure and can be fabricated by the regular complementary metal-oxide-semiconductor (CMOS) technology at low cost. The insulated-gate unipolar diode (IGUD) is simulated by device simulator tools. Simulations show the output curve of the IGUD is not only similar to a regular diode but also can be shifted by the gate. The idea of IGUD has been evaluated by experimental tests. The experimental data are in good agreement with the simulation results. The IGUD can be used as a fast switch in high-current low-voltage applications. Also, it can be used to achieve controlled rectification without synchronisation to the AC input.
期刊介绍：
Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews.
Scope
As a journal at the forefront of its field, Electronics Letters publishes papers covering all themes of electronic and electrical engineering. The major themes of the journal are listed below.
Antennas and Propagation
Biomedical and Bioinspired Technologies, Signal Processing and Applications
Control Engineering
Electromagnetism: Theory, Materials and Devices
Electronic Circuits and Systems
Image, Video and Vision Processing and Applications
Information, Computing and Communications
Instrumentation and Measurement
Microwave Technology
Optical Communications
Photonics and Opto-Electronics
Power Electronics, Energy and Sustainability
Radar, Sonar and Navigation
Semiconductor Technology
Signal Processing
MIMO
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