A Power Transistor Cell Optimized CMOS Power Amplifier for Ku-Band Phased Array Application

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Microwave and Optical Technology Letters Pub Date : 2025-01-21 DOI:10.1002/mop.70085

Kai Zhang, Shuai Liu, Zhiqing Liu, Huihua Liu

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引用次数: 0

Abstract

A Ku-band CMOS power amplifier (PA) with an optimized power transistor cell for phased array application has been implemented using $0.18$ -μm RF CMOS technology. To alleviate the parasitic effects induced by the metal interconnection between the common source and common gate, the power transistor cell has been optimized. A pair of cascode transistors is employed as a unit cell to construct the power cell so that the metal interconnection loss and power transmission capability of the cascode power transistor cell can be improved. To ease pressure on the hot carrier effect and current intensity requirement at $12 5^{\circ}$ C, the Ku-band CMOS PA operates under a 1.8 V supply voltage and provides saturation output power of 14.3 dBm with a peak power-added efficiency of 13.7% at 17 GHz. It shows suitable performances for phased array application.

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来源期刊

Microwave and Optical Technology Letters 工程技术-工程：电子与电气

CiteScore

3.40

自引率

20.00%

发文量

371

审稿时长

4.3 months

期刊介绍： Microwave and Optical Technology Letters provides quick publication (3 to 6 month turnaround) of the most recent findings and achievements in high frequency technology, from RF to optical spectrum. The journal publishes original short papers and letters on theoretical, applied, and system results in the following areas. - RF, Microwave, and Millimeter Waves - Antennas and Propagation - Submillimeter-Wave and Infrared Technology - Optical Engineering All papers are subject to peer review before publication