Tailoring Ga-Doped ZnO Thin Film Properties for Enhanced Optoelectric Device Performance: Argon Flow Rate Modulation and Dynamic Sputtering Geometry Analysis

Abstract

The impact of dynamic sputtering geometry on the properties of ZnO: Ga (GZO) thin film nanomaterials is investigated by systematically varying Ar flow rates and substrate positions during the film growth. The structural, optical, and electrical characteristics of GZO layers, deposited from a ZnO: Ga (5.7 wt%) ceramic-type sputtering target, are comprehensively evaluated to reveal the relationship between the sputtering geometry and material properties. The obtained electrical properties, comparatively high carrier mobility 11.3 × 10¹ cm² V⁻¹ s⁻¹ and the lowest resistivity 1.13 × 10⁻³ Ω-cm, together with a moderately high optoelectric figure of merit with the films prepared using around 6 sccm Ar-flow rate (corresponding to around 4.92 mTorr Ar partial pressure) reveal distinct correlations between the sputtering conditions and thin film properties, providing insights into the optimization of sputtering parameters for tailored material synthesis required for advanced and emerging applications. The GZO thin film (prepared with the optimal setting of 6 sccm Ar flow rate) exhibits remarkable optoelectronic capabilities as a transport layer in solar cells, reaching peak efficiencies of 26.34% for CIGS, 14.142% for CdTe, and 24.289% for Cs₂AgBiBr₆ perovskite in SCAPS-1D simulated models. This study advances sputtering techniques for precise engineering of functional nanomaterials with enhanced performance and versatility, contributing to material synthesis optimization for emerging applications.