{"title":"Design and implementation of a full analogue gate driver for current compensation of paralleled SiC-MOSFETs","authors":"Adel Rezaeian, Ahmad Afifi, Hamid Bahrami","doi":"10.1049/pel2.12834","DOIUrl":null,"url":null,"abstract":"<p>Silicon carbide MOSFETs have current ratings that are not sufficiently high to be used in high-power converters. It is necessary to connect several MOSFETs in parallel in order to increase current capabilities. However, transient imbalance peak currents during turn-on and -off processes challenge the performance and reliability of parallel MOSFETs. This paper considers the impact factors of device parameters, asymmetrical power circuit layout and circuit parasitic analytically to reveal the imbalance current peaks. The turn-on and -off transient conditions are studied and mathematically investigated. In master-slave configuration, a fully analogue active gate driver is designed and implemented to suppress the imbalance current among parallel silicon carbide (SiC) MOSFETs. In the proposed scheme, by exploiting an imbalance current detection circuit and I-controller in a negative feedback for the slave MOSFET, an appropriate control voltage is obtained. The output voltage of active gate driver is adjusted by the control voltage, whether positive or negative in turn-on and -off transient, in order to synchronize the peak currents of paralleled modules. Moreover, a detailed circuit of the designed compensator is presented and discussed. The experimental results are presented to verify the reliability and the effectiveness of the proposed compensator.</p>","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"18 1","pages":""},"PeriodicalIF":1.7000,"publicationDate":"2024-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12834","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Power Electronics","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/pel2.12834","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Silicon carbide MOSFETs have current ratings that are not sufficiently high to be used in high-power converters. It is necessary to connect several MOSFETs in parallel in order to increase current capabilities. However, transient imbalance peak currents during turn-on and -off processes challenge the performance and reliability of parallel MOSFETs. This paper considers the impact factors of device parameters, asymmetrical power circuit layout and circuit parasitic analytically to reveal the imbalance current peaks. The turn-on and -off transient conditions are studied and mathematically investigated. In master-slave configuration, a fully analogue active gate driver is designed and implemented to suppress the imbalance current among parallel silicon carbide (SiC) MOSFETs. In the proposed scheme, by exploiting an imbalance current detection circuit and I-controller in a negative feedback for the slave MOSFET, an appropriate control voltage is obtained. The output voltage of active gate driver is adjusted by the control voltage, whether positive or negative in turn-on and -off transient, in order to synchronize the peak currents of paralleled modules. Moreover, a detailed circuit of the designed compensator is presented and discussed. The experimental results are presented to verify the reliability and the effectiveness of the proposed compensator.
期刊介绍:
IET Power Electronics aims to attract original research papers, short communications, review articles and power electronics related educational studies. The scope covers applications and technologies in the field of power electronics with special focus on cost-effective, efficient, power dense, environmental friendly and robust solutions, which includes:
Applications:
Electric drives/generators, renewable energy, industrial and consumable applications (including lighting, welding, heating, sub-sea applications, drilling and others), medical and military apparatus, utility applications, transport and space application, energy harvesting, telecommunications, energy storage management systems, home appliances.
Technologies:
Circuits: all type of converter topologies for low and high power applications including but not limited to: inverter, rectifier, dc/dc converter, power supplies, UPS, ac/ac converter, resonant converter, high frequency converter, hybrid converter, multilevel converter, power factor correction circuits and other advanced topologies.
Components and Materials: switching devices and their control, inductors, sensors, transformers, capacitors, resistors, thermal management, filters, fuses and protection elements and other novel low-cost efficient components/materials.
Control: techniques for controlling, analysing, modelling and/or simulation of power electronics circuits and complete power electronics systems.
Design/Manufacturing/Testing: new multi-domain modelling, assembling and packaging technologies, advanced testing techniques.
Environmental Impact: Electromagnetic Interference (EMI) reduction techniques, Electromagnetic Compatibility (EMC), limiting acoustic noise and vibration, recycling techniques, use of non-rare material.
Education: teaching methods, programme and course design, use of technology in power electronics teaching, virtual laboratory and e-learning and fields within the scope of interest.
Special Issues. Current Call for papers:
Harmonic Mitigation Techniques and Grid Robustness in Power Electronic-Based Power Systems - https://digital-library.theiet.org/files/IET_PEL_CFP_HMTGRPEPS.pdf