A Near Room Temperature Curie Temperature in a New Type of Diluted Magnetic Semiconductor (Ba,K)(Zn,Mn)2As2 (Adv. Phys. Res. 1/2025)

Advanced Physics Research Pub Date : 2025-01-10 DOI:10.1002/apxr.202570001

Yi Peng, Xiang Li, Luchuan Shi, Guoqiang Zhao, Jun Zhang, Jianfa Zhao, Xiancheng Wang, Bo Gu, Zheng Deng, Yasutomo J. Uemura, Changqing Jin

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Abstract

Room-temperature ferromagnetism in diluted magnetic semiconductors

Diluted magnetic semiconductors (DMS), which combine the advantages of carrier processes in semiconductors and spin storage in ferromagnets, have significant impacts on generating brand new information technologies. However, achieving room-temperature ferromagnetism in a controllable mode for DMS is a major challenge. In article number 2400124, Bo Gu, Zheng Deng, Changqing Jin and co-workers report experimental enhancement of T_C to a record 260 K for the new-generation DMS material (Ba,K)(Zn,Mn)₂As₂ (or “BZA”) through high-pressure synthesis that effectively optimizes spin and charge doping.

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新型稀释磁性半导体（Ba，K）（Zn,Mn）2As2的近室温居里温度。研究》1/2025)

稀磁半导体的室温铁磁性稀磁半导体（DMS）结合了半导体中的载流子工艺和铁磁体中的自旋存储的优点，对产生全新的信息技术具有重要影响。然而，在可控模式下实现DMS的室温铁磁性是一个主要挑战。在2400124号文章中，Gu Bo, Zheng Deng， Changqing Jin及其同事报道了新一代DMS材料（Ba，K）（Zn,Mn）2As2（或“BZA”）通过高压合成有效地优化了自旋和电荷掺杂，实验将TC提高到创纪录的260 K。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced Physics Research

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