Design and verification of a cascaded nanosecond rise time high-voltage positive-polarity square wave power supply topology

IF 1.7 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Hao Yan, Xuebao Li, Yan Pan, Rui Jin, Zhibin Zhao
{"title":"Design and verification of a cascaded nanosecond rise time high-voltage positive-polarity square wave power supply topology","authors":"Hao Yan,&nbsp;Xuebao Li,&nbsp;Yan Pan,&nbsp;Rui Jin,&nbsp;Zhibin Zhao","doi":"10.1049/pel2.12841","DOIUrl":null,"url":null,"abstract":"<p>High-voltage SiC devices operate under repetitive positive polarity square wave voltages with rise times ranging from tens to hundreds of nanoseconds. Under these conditions, the partial discharge and withstand voltage characteristics differ significantly from those observed in traditional AC and DC tests. Therefore, there is an urgent need to conduct insulation assessments for devices under square wave conditions, which necessitates the development of a high-voltage positive polarity square wave power supply with flexible nanosecond rise times suitable for SiC applications. This paper addresses the need to simulate the actual voltage conditions experienced by SiC devices and proposes a high-voltage positive polarity square wave power supply topology using cascaded low-voltage square wave generation units. The working principle is explained in detail, along with the main hardware design and parameter selection methods. Transient simulation models for both normal and single-stage fault conditions were established, verifying the proposed topology's ability to flexibly adjust square wave output parameters such as frequency, rise time, and duty cycle, as well as its ability to continue operating in fault conditions even with single or multiple switch failures. Finally, a 5-stage cascaded high-voltage positive polarity square wave power supply prototype was developed, achieving flexible and independent control of all switching devices through a field-programmable gate array. The prototype achieved performance parameters of 4 kV voltage level, repetition frequency of DC to 5 kHz, duty cycle of 0% to 100%, and voltage rise time of 80 to 300 ns, validating the overall feasibility and reliability of the proposed topology. The research findings in this paper provide new design ideas for the development of square wave power supplies and offer a power source for the insulation assessment of SiC devices.</p>","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"18 1","pages":""},"PeriodicalIF":1.7000,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.12841","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Power Electronics","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/pel2.12841","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

High-voltage SiC devices operate under repetitive positive polarity square wave voltages with rise times ranging from tens to hundreds of nanoseconds. Under these conditions, the partial discharge and withstand voltage characteristics differ significantly from those observed in traditional AC and DC tests. Therefore, there is an urgent need to conduct insulation assessments for devices under square wave conditions, which necessitates the development of a high-voltage positive polarity square wave power supply with flexible nanosecond rise times suitable for SiC applications. This paper addresses the need to simulate the actual voltage conditions experienced by SiC devices and proposes a high-voltage positive polarity square wave power supply topology using cascaded low-voltage square wave generation units. The working principle is explained in detail, along with the main hardware design and parameter selection methods. Transient simulation models for both normal and single-stage fault conditions were established, verifying the proposed topology's ability to flexibly adjust square wave output parameters such as frequency, rise time, and duty cycle, as well as its ability to continue operating in fault conditions even with single or multiple switch failures. Finally, a 5-stage cascaded high-voltage positive polarity square wave power supply prototype was developed, achieving flexible and independent control of all switching devices through a field-programmable gate array. The prototype achieved performance parameters of 4 kV voltage level, repetition frequency of DC to 5 kHz, duty cycle of 0% to 100%, and voltage rise time of 80 to 300 ns, validating the overall feasibility and reliability of the proposed topology. The research findings in this paper provide new design ideas for the development of square wave power supplies and offer a power source for the insulation assessment of SiC devices.

Abstract Image

级联纳秒级上升时间高压正极性方波电源拓扑的设计与验证
高压SiC器件在重复的正极性方波电压下工作,上升时间从几十纳秒到几百纳秒不等。在这些条件下,局部放电和耐压特性与传统交流和直流试验中观察到的特性有很大不同。因此,迫切需要对方波条件下的器件进行绝缘评估,这就需要开发一种适合SiC应用的具有柔性纳秒上升时间的高压正极性方波电源。本文解决了模拟SiC器件实际电压条件的需要,并提出了一种使用级联低压方波产生单元的高压正极性方波电源拓扑结构。详细阐述了其工作原理,主要硬件设计和参数选择方法。建立了正常和单级故障条件下的瞬态仿真模型,验证了所提出的拓扑结构灵活调整方波输出参数(如频率、上升时间和占空比)的能力,以及即使在单个或多个开关故障的故障条件下仍能继续工作的能力。最后,开发了5级级联高压正极性方波电源样机,通过现场可编程门阵列实现了对所有开关器件的灵活独立控制。样机实现了4 kV电压水平、直流至5 kHz重复频率、占空比为0%至100%、电压上升时间为80至300 ns的性能参数,验证了所提出拓扑的总体可行性和可靠性。本文的研究成果为方波电源的发展提供了新的设计思路,也为SiC器件的绝缘评估提供了一个动力源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IET Power Electronics
IET Power Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
5.50
自引率
10.00%
发文量
195
审稿时长
5.1 months
期刊介绍: IET Power Electronics aims to attract original research papers, short communications, review articles and power electronics related educational studies. The scope covers applications and technologies in the field of power electronics with special focus on cost-effective, efficient, power dense, environmental friendly and robust solutions, which includes: Applications: Electric drives/generators, renewable energy, industrial and consumable applications (including lighting, welding, heating, sub-sea applications, drilling and others), medical and military apparatus, utility applications, transport and space application, energy harvesting, telecommunications, energy storage management systems, home appliances. Technologies: Circuits: all type of converter topologies for low and high power applications including but not limited to: inverter, rectifier, dc/dc converter, power supplies, UPS, ac/ac converter, resonant converter, high frequency converter, hybrid converter, multilevel converter, power factor correction circuits and other advanced topologies. Components and Materials: switching devices and their control, inductors, sensors, transformers, capacitors, resistors, thermal management, filters, fuses and protection elements and other novel low-cost efficient components/materials. Control: techniques for controlling, analysing, modelling and/or simulation of power electronics circuits and complete power electronics systems. Design/Manufacturing/Testing: new multi-domain modelling, assembling and packaging technologies, advanced testing techniques. Environmental Impact: Electromagnetic Interference (EMI) reduction techniques, Electromagnetic Compatibility (EMC), limiting acoustic noise and vibration, recycling techniques, use of non-rare material. Education: teaching methods, programme and course design, use of technology in power electronics teaching, virtual laboratory and e-learning and fields within the scope of interest. Special Issues. Current Call for papers: Harmonic Mitigation Techniques and Grid Robustness in Power Electronic-Based Power Systems - https://digital-library.theiet.org/files/IET_PEL_CFP_HMTGRPEPS.pdf
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