Improving the efficiency and performance of Rb2SnI6-based perovskite solar cells through comprehensive optimization: a numerical study

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-01-30 DOI:10.1007/s10825-024-02276-0

Minhaz Ul Alam, Md. Kamrul Islam Shifat, Jibon Krishna Modak, Md. Tarekuzzaman, Md. Ismail Haque, Md. Rasheduzzaman, Md Abdul Qader, Riazul Islam, Yasir Arafat, Md. Zahid Hasan

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Abstract

In this study, we explored the optimal performance of perovskite solar cells (PSCs) using the tin-halide material Rb₂SnI₆. This study focuses exclusively on the electrical properties of the devices, as simulated using SCAPS-1D software (solar capacitance simulator). The SCAPS-1D was employed to improve the device in the Rb₂SnI₆-based PSC, which utilized tungsten disulfide (WS₂) as the electron transport layer and cadmium telluride (CdTe) as the hole transport layer (HTL). To identify the most suitable electron transport layer (ETL), we initially investigated WS₂, SnS₂, PCBM, and C₆₀. The ITO/WS₂/ Rb₂SnI₆/CdTe/Ni structure proved to be the most effective ETL after extensive investigation, demonstrating a power conversion efficiency (PCE) of 24.95%, a Voc of 1.0896 V, a Jsc of 44.6795 mA cm², and an FF of 82.71%. Subsequently, we evaluated the impact of the absorber thickness, ETL thickness, and defect density on the device’s effectiveness in the Rb₂SnI₆, WS₂, and CdTe layers. We further investigated the effect of adjusting the interfacial defect densities at the CdTe/Rb₂SnI₆ and Rb₂SnI₆/WS₂ interfaces to optimize the device’s capabilities further. Additionally, we examined the proposed PSC’s quantum efficiency (QE), current density–voltage (J-V), shunt resistance, series resistance, capacitance–voltage, working temperature, and generation-recombination parameters. The results of these simulations provide valuable information for the excellent scientific fabrication of an inorganic PSC that is based on Rb₂SnI₆.

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.