Pressure-induced physical properties of lead-free double perovskite oxides La2NiMnO6 for optoelectronic applications

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Md. Lokman Ali, Sanzida Naznin Mim, Zihad Hossain, Mahbub Alam, H. M. A. R. Maruf
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引用次数: 0

Abstract

Recently, lead-free double perovskites have gathered significant attention in the research community for their unique way of behaving, and multipurpose applications in memory devices, different types of fuel cells, catalyst electrodes, solar cells, spintronics, and optoelectronics devices. This study widely explores the structural, electronic, optical, elastic, mechanical, and thermodynamical properties of lead-free double perovskite compound La2NiMnO6 (LNMO) using density functional theory (DFT) computations along with a precise way of handling electron interactions known as the generalized gradient approximation (GGA), specifically utilizing the Perdew–Burke–Ernzerhof (PBE) method under differed pressure conditions. It goals to boost the characteristics of LNMO by applying pressure and offers valuable supervision for future researches. LNMO displays varied optical and electronic individualities, including Drude-like metallic behavior, variation of refractive index with pressure, higher reflectivity in UV region, pressure-dependent enhanced conductivity and amended applications in optoelectronics. We explore how La2NiMnO6 reacts to stress, distortion, and shear forces, revealing its strength and stability. The analysis of its mechanical appearances uncovers La2NiMnO6's pliability and the modification to ductility from brittleness as pressure rises, leading to improved stiffness and flexibility. Additional investigation on the direction-dependent mechanical property discloses the transition from anisotropic to isotropic under increasing pressure. These findings not only expand our fundamental comprehension of La2NiMnO6 but also carry noteworthy practical inferences for its application across various technological applications.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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