H. Mancer, M. Caid, H. Rached, S. Amari, D. Rached
{"title":"First-principles calculations to investigate vanadium-doped Li2Te compound for optoelectronic and spintronic applications","authors":"H. Mancer, M. Caid, H. Rached, S. Amari, D. Rached","doi":"10.1007/s11082-025-08056-9","DOIUrl":null,"url":null,"abstract":"<div><p>The present study reports the structural, electronic, magnetic, and optical properties of vanadium-doped Li<sub>2</sub>Te using the ab-initio simulations within the framework of density functional theory. To account for exchange-correlation effects, the PBE-GGA, PBE-GGA-mBJ, and PBE-GGA+U approximations were employed. Our findings reveal that the ground state of vanadium-doped Li<sub>2</sub>Te is ferromagnetic, with the ferromagnetic behavior predominantly arising from strong spin-splitting effects on the d orbitals of vanadium atoms. The formation energy (<span>\\({E}_{F}\\)</span>) was calculated to confirm the thermodynamic stability and alloying feasibility of the compound at zero temperature. The negative value of <span>\\({E}_{F}\\)</span> indicates favorable alloying stability. Electronic structure analysis demonstrates that the material exhibits half-metallic ferromagnetic behavior, characterized by 100% spin polarization at the Fermi level. This property makes it a promising candidate for spintronic applications. To further understand the magnetic interactions, the s(p)-d exchange coupling constants (<span>\\({N}_{0\\alpha }\\)</span> and <span>\\({N}_{0\\beta }\\)</span>) were computed, revealing significant exchange splitting effects in both conduction and valence bands. These findings provide comprehensive insights into the multifunctional properties of vanadium-doped Li<sub>2</sub>Te, offering valuable references for its potential applications in next-generation spintronic devices.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08056-9","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The present study reports the structural, electronic, magnetic, and optical properties of vanadium-doped Li2Te using the ab-initio simulations within the framework of density functional theory. To account for exchange-correlation effects, the PBE-GGA, PBE-GGA-mBJ, and PBE-GGA+U approximations were employed. Our findings reveal that the ground state of vanadium-doped Li2Te is ferromagnetic, with the ferromagnetic behavior predominantly arising from strong spin-splitting effects on the d orbitals of vanadium atoms. The formation energy (\({E}_{F}\)) was calculated to confirm the thermodynamic stability and alloying feasibility of the compound at zero temperature. The negative value of \({E}_{F}\) indicates favorable alloying stability. Electronic structure analysis demonstrates that the material exhibits half-metallic ferromagnetic behavior, characterized by 100% spin polarization at the Fermi level. This property makes it a promising candidate for spintronic applications. To further understand the magnetic interactions, the s(p)-d exchange coupling constants (\({N}_{0\alpha }\) and \({N}_{0\beta }\)) were computed, revealing significant exchange splitting effects in both conduction and valence bands. These findings provide comprehensive insights into the multifunctional properties of vanadium-doped Li2Te, offering valuable references for its potential applications in next-generation spintronic devices.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.