Interfacial optimization of hematite electron transport layer for enhanced charge transport in perovskite solar cells

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-02-01 DOI:10.1007/s11082-024-08033-8

Muhammad Anwar Jan, Hafiz Muhammad Noman, Akbar Ali Qureshi, Fuchun Yang

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引用次数: 0

Abstract

Perovskite solar cells (PSCs) have emerged as a viable contender for the third-generation solar cell, thanks to their exceptional characteristics involving high power conversion efficiency (PCE) and comparatively low fabrication costs. However, the challenges associated with interfacial recombination and poor device stability under operating conditions are still limiting their commercial viability. These challenges can be overcome by incorporating interfacial layers in order to enhance charge transport and reduce recombination losses. Herein, we introduce piperazine dihydriodide (PZDI) as an interfacial layer between the hematite electron transport layer (ETL) and absorber layer in PSCs. The high-quality PZDI layer further passivates surface defects and improves energy level alignment to facilitate more efficient charge extraction. The PCE was noted significantly higher by incorporation of the PZDI interfacial layer, reaching 17.5%, compared to 13.0% for the reference device without an interfacial layer. Long-term stability tests demonstrated that the target device retains 91.80% of its initial efficiency compared to 82.9% for the reference device after 500 h. These findings highlight the key function of the PZDI interfacial layer enhancing the photovoltaic (PV) performance of PSCs and can serve as crucial components in the development of long-lasting and high-efficiency PV.

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.