Mohammedasif Rahamathulla, Dinesh Kumar, Sheela K. Ramasesha, Jayesh Cherusseri
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引用次数: 0
Abstract
This study investigates the optimization of the near-infrared (NIR) performance of CdS/CdTe nanowall-based solar cells through strategic engineering of the CdTe/gold interface. The effect of including various materials, including lead telluride (PbTe), lead sulfide (PbS), germanium telluride (GeTe), molybdenum ditelluride (MoTe2), copper telluride (Cu₂Te), and tin telluride (SnTe), has been studied using the device physics-based simulations TCAD software Silvaco. The effect of these materials on NIR absorption and charge carrier dynamics is evaluated through in-depth simulations of current–voltage characteristics, internal quantum efficiency (IQE), and energy band diagrams. Our results reveal that MoTe2 offers the optimal trade-off between IQE and key photovoltaic parameters, exhibiting superior performance across a broad spectral range, with particular excellence in the NIR region. The study reveals the pivotal role of heterojunction types formed at the CdTe/interfacial material interface on device performance. This study reveals critical material-performance relationships in nanostructured solar cells, offering a valuable insight to aid in optimizing NIR response for the development of advanced photovoltaics.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.