The in-situ parasitic microstructure interface and defect formation mechanism in (010) β-Ga2O3 epitaxial film via MOCVD

IF 6.8 2区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Science China Materials Pub Date : 2025-01-02 DOI:10.1007/s40843-024-3221-0

Xianqiang Song (, ), Yunlong He (, ), Zhan Wang (, ), Xiaoli Lu (, ), Jing Sun (, ), Ying Zhou (, ), Yang Liu (, ), Jiatong Fan (, ), Xiaoning He (, ), Xuefeng Zheng (, ), Xiaohua Ma (, ), Yue Hao (, )

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引用次数: 0

Abstract

In this study, a typical hillock surface defect was discovered in (010) β-Ga₂O₃ thin films grown by metal-organic chemical vapor deposition (MOCVD), and the morphology and structure were systematically investigated. The observed defects exhibit a polygonal shape with a ridge-like hillock along the [001] direction. Transmission electron microscopy (TEM) microanalysis reveals that polygonal hillock defects are composed of twin grains forming an inverted pyramid shape embedded in the epitaxial layer, which exhibits twofold rotational symmetry along the [100] crystal direction. The boundary between the defective and perfect lattices appears band-like, characterized by complex faults, with structural relationships between the twin region and the matrix identified as [001]_matrix∥[010]_Defect and {−310}_matrix∥{−201}_Defect. The origin of surface defects in the (010) β-Ga₂O₃ homoepitaxial layers could be attributed not only to the extent of substrate defects but also to epitaxial process conditions. The definitive explanation is the localized aggregation of gallium atoms/oxygen vacancies during the growth process, as evidenced by energy-dispersive X-ray (EDX) analysis and optimized experiments. This work provides brand-new perspectives into the study of defects in β-Ga₂O₃ epitaxial films, which further advances the application of Ga₂O₃ materials in power device technologies.

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来源期刊

Science China Materials Materials Science-General Materials Science

CiteScore

11.40

自引率

7.40%

发文量

949

期刊介绍： Science China Materials (SCM) is a globally peer-reviewed journal that covers all facets of materials science. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China. The journal is jointly published monthly in both printed and electronic forms by Science China Press and Springer. The aim of SCM is to encourage communication of high-quality, innovative research results at the cutting-edge interface of materials science with chemistry, physics, biology, and engineering. It focuses on breakthroughs from around the world and aims to become a world-leading academic journal for materials science.