Passive matrix Schottky barrier 2D photodiode array on graphene/SOI platform

IF 2.5 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Applied Physics A Pub Date : 2025-02-04 DOI:10.1007/s00339-025-08298-0

Alper Yanilmaz, Özhan Ünverdi, Cem Çelebi

{"title":"Passive matrix Schottky barrier 2D photodiode array on graphene/SOI platform","authors":"Alper Yanilmaz, Özhan Ünverdi, Cem Çelebi","doi":"10.1007/s00339-025-08298-0","DOIUrl":null,"url":null,"abstract":"<div><p>We fabricated 4 × 4 pixel two-dimensional (2D) photodiode array (PDA) out of monolayer graphene and n-type silicon (n-Si) electrodes on a silicon-on-insulator (SOI) substrate. Our device design is based on passive matrix sensor array architecture consisting of individual graphene and silicon electrodes aligned perpendicular to each other. I-V measurements conducted at room temperature to reveal the electronic characteristics of graphene and Si junction in the device structure. The spectral responsivity, respond speed and the optical crosstalk of each G/Si pixels in the array have been determined by wavelength resolved and time dependent photocurrent spectroscopy measurements. Micro-Raman mapping measurements were conducted to examine the surface coverage of graphene electrode on each pixel. The results of Micro-Raman mapping measurements were correlated with the corresponding photocurrent data acquired under light illumination. We believe that this work constitutes a significant potential in integrating variety of 2D materials and SOI technology into next generation image sensing and multiple pixel light detection applications.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-025-08298-0.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-025-08298-0","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

We fabricated 4 × 4 pixel two-dimensional (2D) photodiode array (PDA) out of monolayer graphene and n-type silicon (n-Si) electrodes on a silicon-on-insulator (SOI) substrate. Our device design is based on passive matrix sensor array architecture consisting of individual graphene and silicon electrodes aligned perpendicular to each other. I-V measurements conducted at room temperature to reveal the electronic characteristics of graphene and Si junction in the device structure. The spectral responsivity, respond speed and the optical crosstalk of each G/Si pixels in the array have been determined by wavelength resolved and time dependent photocurrent spectroscopy measurements. Micro-Raman mapping measurements were conducted to examine the surface coverage of graphene electrode on each pixel. The results of Micro-Raman mapping measurements were correlated with the corresponding photocurrent data acquired under light illumination. We believe that this work constitutes a significant potential in integrating variety of 2D materials and SOI technology into next generation image sensing and multiple pixel light detection applications.

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来源期刊

Applied Physics A 工程技术-材料科学：综合

CiteScore

4.80

自引率

7.40%

发文量

964

审稿时长

38 days

期刊介绍： Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.