{"title":"UV-A Selective ZnO Thin-Film Based Photosensor With Enhanced Detectivity and Linear Dynamic Range","authors":"Pritika Singh;Tejendra Dixit;Vipul Singh","doi":"10.1109/LPT.2025.3529767","DOIUrl":null,"url":null,"abstract":"In this study, we report a high-quality ZnO thin film synthesized using the sol-gel method for developing a spectrally selective UV photodetector with enhanced detectivity and LDR. The effect of varying precursor concentrations from 1 M to 3 M was systematically examined, with 3 M identified as the optimal concentration. The 3 M ZnO thin film-based planar Ag/ZnO/Ag Metal-Semiconductor-Metal (MSM) structure device has demonstrated dominant photosensitivity of <inline-formula> <tex-math>$2.2\\times 10^{6}$ </tex-math></inline-formula> at 350 nm (UV-A) radiation and 20 V applied bias. Additionally, the device exhibited a maximum responsivity of 43 A/W with a full width at half maxima (FWHM) of 38 nm, detectivity of <inline-formula> <tex-math>$7.4\\times 10^{13}$ </tex-math></inline-formula> Jones, external quantum efficiency (EQE) of 15444%, and a linear dynamic range (LDR) of 112 dB at 350 nm (UV-A) radiation and 20 V applied bias. This work presents a cost-effective alternative to traditional methods, highlighting the strong potential of the 3 M ZnO thin film for advanced UV photodetector applications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"203-206"},"PeriodicalIF":2.3000,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10841378/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, we report a high-quality ZnO thin film synthesized using the sol-gel method for developing a spectrally selective UV photodetector with enhanced detectivity and LDR. The effect of varying precursor concentrations from 1 M to 3 M was systematically examined, with 3 M identified as the optimal concentration. The 3 M ZnO thin film-based planar Ag/ZnO/Ag Metal-Semiconductor-Metal (MSM) structure device has demonstrated dominant photosensitivity of $2.2\times 10^{6}$ at 350 nm (UV-A) radiation and 20 V applied bias. Additionally, the device exhibited a maximum responsivity of 43 A/W with a full width at half maxima (FWHM) of 38 nm, detectivity of $7.4\times 10^{13}$ Jones, external quantum efficiency (EQE) of 15444%, and a linear dynamic range (LDR) of 112 dB at 350 nm (UV-A) radiation and 20 V applied bias. This work presents a cost-effective alternative to traditional methods, highlighting the strong potential of the 3 M ZnO thin film for advanced UV photodetector applications.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.