{"title":"Effect of P-Electrode Area Ratio on Micro-LED Optoelectronic Performance","authors":"Shi-Biao Liu;Wen-An Guo;You-Cai Deng;Ming-He Wan;Mai-Jia Lin;Tao-Ming Liu;Yue-Lin;Hao-Chung Kuo;Yi-Jun Lu;Zhong Chen;Ting-Zhu Wu","doi":"10.1109/LPT.2025.3534203","DOIUrl":null,"url":null,"abstract":"The P-electrode is essential for achieving uniform current distribution within the chip, which directly affects the device optoelectronic performance. In this study, micro-LEDs of varying sizes (22, 34, and <inline-formula> <tex-math>$46~\\mu $ </tex-math></inline-formula>m) and P-electrode area ratios (20%, 30%, and 40%) were fabricated and analyzed. The findings reveal that the optoelectronic performance of micro-LEDs smaller than <inline-formula> <tex-math>$50~\\mu $ </tex-math></inline-formula>m is significantly affected by different P-electrode area ratios under low current density conditions. This effect primarily results from the combined influence of current distribution and the light-blocking properties of the P-electrode metal. To characterize the performance of these micro-LEDs, hyperspectral imaging and COMSOL simulations were employed. The insights gained from these results provide valuable guidance for the design and fabrication of micro-LEDs optimized for low current density operation.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 4","pages":"239-242"},"PeriodicalIF":2.3000,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10854536/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The P-electrode is essential for achieving uniform current distribution within the chip, which directly affects the device optoelectronic performance. In this study, micro-LEDs of varying sizes (22, 34, and $46~\mu $ m) and P-electrode area ratios (20%, 30%, and 40%) were fabricated and analyzed. The findings reveal that the optoelectronic performance of micro-LEDs smaller than $50~\mu $ m is significantly affected by different P-electrode area ratios under low current density conditions. This effect primarily results from the combined influence of current distribution and the light-blocking properties of the P-electrode metal. To characterize the performance of these micro-LEDs, hyperspectral imaging and COMSOL simulations were employed. The insights gained from these results provide valuable guidance for the design and fabrication of micro-LEDs optimized for low current density operation.
期刊介绍:
IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.