Guohao Yang , Tianhong Liu , Yanwei Yang , Shengyu Liu , Yifeng Lu , Jinping Li , Cunzhu Tong
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引用次数: 0
Abstract
Avalanche photodiodes (APDs) are widely utilized in high-bit-rate long-distance optical fiber communication systems owing to their internal gain. This study employs the finite element method to simulate an InGaAs/InAlAs APD with a hybrid absorption layer, analyzing the effects of both the field control and absorption layers on performance. Through the implementation of band engineering techniques, the InGaAs/InAlAs APD is optimized to extend its dynamic range and enhance its bandwidth. The simulation results demonstrate the successful fabrication of an APD with a bandwidth of 25.5 GHz and dark current of 0.77 μA.
期刊介绍:
The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region.
Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine.
Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.