Xiangfeng Qi , Enling Li , Yang Shen , Ke Qin , Xiaoyu Zhao , Deming Ma , Zhen Cui
{"title":"GaN/HfGe2N4 heterojunction with promising project for photocatalyst and photodetector applications","authors":"Xiangfeng Qi , Enling Li , Yang Shen , Ke Qin , Xiaoyu Zhao , Deming Ma , Zhen Cui","doi":"10.1016/j.surfin.2025.105783","DOIUrl":null,"url":null,"abstract":"<div><div>The photocatalysis property and photo-electro properties of the GaN/HfGe<sub>2</sub>N<sub>4</sub> heterojunction are investigated, and the application prospects in the fields of photocatalysts and photodetectors are discussed. The designed GaN/HfGe<sub>2</sub>N<sub>4</sub> heterojunction is verified to possess thermal stability, and the absorption spectrum of the GaN/HfGe<sub>2</sub>N<sub>4</sub> heterojunction is significantly broadened. The GaN/HfGe<sub>2</sub>N<sub>4</sub> heterojunction fulfilling the criteria for band edge positions at pH of 0 to 14, indicating which can act as a potential photocatalyst for water splitting. A high photo response (3.73 <span><math><msubsup><mi>a</mi><mn>0</mn><mn>2</mn></msubsup></math></span>/photons) and an extinction ratio (6.81) of the photodetector based on the GaN/HfGe<sub>2</sub>N<sub>4</sub> heterojunction have been calculated, demonstrating potential advantage in the area of photodetector applications. In conclusion, the GaN/HfGe<sub>2</sub>N<sub>4</sub> heterojunction have the potential for catalytic hydrogen evolution and application in photodetectors.</div></div>","PeriodicalId":22081,"journal":{"name":"Surfaces and Interfaces","volume":"58 ","pages":"Article 105783"},"PeriodicalIF":5.7000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surfaces and Interfaces","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S246802302500046X","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
The photocatalysis property and photo-electro properties of the GaN/HfGe2N4 heterojunction are investigated, and the application prospects in the fields of photocatalysts and photodetectors are discussed. The designed GaN/HfGe2N4 heterojunction is verified to possess thermal stability, and the absorption spectrum of the GaN/HfGe2N4 heterojunction is significantly broadened. The GaN/HfGe2N4 heterojunction fulfilling the criteria for band edge positions at pH of 0 to 14, indicating which can act as a potential photocatalyst for water splitting. A high photo response (3.73 /photons) and an extinction ratio (6.81) of the photodetector based on the GaN/HfGe2N4 heterojunction have been calculated, demonstrating potential advantage in the area of photodetector applications. In conclusion, the GaN/HfGe2N4 heterojunction have the potential for catalytic hydrogen evolution and application in photodetectors.
期刊介绍:
The aim of the journal is to provide a respectful outlet for ''sound science'' papers in all research areas on surfaces and interfaces. We define sound science papers as papers that describe new and well-executed research, but that do not necessarily provide brand new insights or are merely a description of research results.
Surfaces and Interfaces publishes research papers in all fields of surface science which may not always find the right home on first submission to our Elsevier sister journals (Applied Surface, Surface and Coatings Technology, Thin Solid Films)