{"title":"Cu4SnS4 thin films fabricated by sulfurizing thermally evaporated Cu/Sn/Cu metal layers","authors":"U. Chalapathi , Y.B. Kishore Kumar , Nandarapu Purushotham Reddy , Salh Alhammadi , Radhalayam Dhanalakshmi , Golkonda Srinivas Reddy , Adel El-marghany , Krithikaa Mohanarangam , Sambasivam Sangaraju , Vasudeva Reddy Minnam Reddy , Si-Hyun Park","doi":"10.1016/j.physb.2024.416876","DOIUrl":null,"url":null,"abstract":"<div><div>Cu<sub>4</sub>SnS<sub>4</sub> thin films show potential for photovoltaic applications due to their direct bandgap and high absorption coefficient. This study explores a two-step process for fabricating these films through thermal evaporation followed by sulfurization. Cu/Sn/Cu layers are deposited on Mo-coated glass substrates, and then sulfurized in a furnace at 550 °C for 10 to 60 min. Films sulfurized for 10 and 30 min exhibited large grain sizes, a highly crystalline structure, and uniform surface morphology, with bandgaps between 1.05–1.1 eV and electrical resistivity between 0.87 and 0.65 <span><math><mi>Ω</mi></math></span> cm, making them suitable for solar cells. However, sulfurization for 60 min caused a reduction in thickness and pinhole formation due to material loss. This method shows promise for producing high-quality Cu<sub>4</sub>SnS<sub>4</sub> films for thin-film solar cells.</div></div>","PeriodicalId":20116,"journal":{"name":"Physica B-condensed Matter","volume":"699 ","pages":"Article 416876"},"PeriodicalIF":2.8000,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica B-condensed Matter","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921452624012171","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Cu4SnS4 thin films show potential for photovoltaic applications due to their direct bandgap and high absorption coefficient. This study explores a two-step process for fabricating these films through thermal evaporation followed by sulfurization. Cu/Sn/Cu layers are deposited on Mo-coated glass substrates, and then sulfurized in a furnace at 550 °C for 10 to 60 min. Films sulfurized for 10 and 30 min exhibited large grain sizes, a highly crystalline structure, and uniform surface morphology, with bandgaps between 1.05–1.1 eV and electrical resistivity between 0.87 and 0.65 cm, making them suitable for solar cells. However, sulfurization for 60 min caused a reduction in thickness and pinhole formation due to material loss. This method shows promise for producing high-quality Cu4SnS4 films for thin-film solar cells.
期刊介绍:
Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work.
Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas:
-Magnetism
-Materials physics
-Nanostructures and nanomaterials
-Optics and optical materials
-Quantum materials
-Semiconductors
-Strongly correlated systems
-Superconductivity
-Surfaces and interfaces