Broadband Near-Infrared Emission of Sm2+ in Highly Stable (Ba,Sr)Al3Si3O4N5 for Encryption and Nondestructive Inspection

IF 9.6 1区 化学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Ying Lv*, Wuqiang Li, Yunkai Li, Mengdi Xu, Yu Liu, Cunjian Lin*, Zhongyuan Li* and Shihai You, 
{"title":"Broadband Near-Infrared Emission of Sm2+ in Highly Stable (Ba,Sr)Al3Si3O4N5 for Encryption and Nondestructive Inspection","authors":"Ying Lv*,&nbsp;Wuqiang Li,&nbsp;Yunkai Li,&nbsp;Mengdi Xu,&nbsp;Yu Liu,&nbsp;Cunjian Lin*,&nbsp;Zhongyuan Li* and Shihai You,&nbsp;","doi":"10.1021/acsmaterialslett.4c0185510.1021/acsmaterialslett.4c01855","DOIUrl":null,"url":null,"abstract":"<p >Broadband near-infrared (NIR) phosphors show great promise in optoelectronics, night vision, and anticounterfeiting. Currently, mainstream transition-metal ions (Cr<sup>3+</sup>, Mn<sup>4+</sup>, etc.) and lanthanides (Nd<sup>3+</sup>, Yb<sup>3+</sup>, etc.) activated NIR phosphors suffer from the low absorption efficiency due to the spin-forbidden d-d or f-f transitions. Herein, we present a robust (Ba,Sr)Al<sub>3</sub>Si<sub>3</sub>O<sub>4</sub>N<sub>5</sub>:Sm<sup>2+</sup> NIR phosphor that exhibits a broad-band peaking at 758 nm with high absorption efficiency stemming from the spin-allowed 4f-5d transition. The lowest excited level in 4f<sup>6</sup> (<sup>5</sup>D<sub>0</sub>) is equivalent to the 4f<sup>5</sup>5d<sub>1</sub> of Sm<sup>2+</sup>, as evidenced by the temperature-dependent (5–300 K) emission spectra. The emission peaks of Sm<sup>2+</sup> in these oxynitride phosphors can be tuned between 742 and 789 nm by simply changing the doping concentration. The optimized NIR phosphor exhibits excellent thermal and chemical stability, making it highly promising in encryption and nondestructive inspection. This work provides a pathway to exploring highly efficient and stable broadband Sm<sup>2+</sup>-doped NIR phosphors for optoelectronic applications.</p>","PeriodicalId":19,"journal":{"name":"ACS Materials Letters","volume":"7 1","pages":"68–75 68–75"},"PeriodicalIF":9.6000,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Materials Letters","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsmaterialslett.4c01855","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Broadband near-infrared (NIR) phosphors show great promise in optoelectronics, night vision, and anticounterfeiting. Currently, mainstream transition-metal ions (Cr3+, Mn4+, etc.) and lanthanides (Nd3+, Yb3+, etc.) activated NIR phosphors suffer from the low absorption efficiency due to the spin-forbidden d-d or f-f transitions. Herein, we present a robust (Ba,Sr)Al3Si3O4N5:Sm2+ NIR phosphor that exhibits a broad-band peaking at 758 nm with high absorption efficiency stemming from the spin-allowed 4f-5d transition. The lowest excited level in 4f6 (5D0) is equivalent to the 4f55d1 of Sm2+, as evidenced by the temperature-dependent (5–300 K) emission spectra. The emission peaks of Sm2+ in these oxynitride phosphors can be tuned between 742 and 789 nm by simply changing the doping concentration. The optimized NIR phosphor exhibits excellent thermal and chemical stability, making it highly promising in encryption and nondestructive inspection. This work provides a pathway to exploring highly efficient and stable broadband Sm2+-doped NIR phosphors for optoelectronic applications.

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来源期刊
ACS Materials Letters
ACS Materials Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
14.60
自引率
3.50%
发文量
261
期刊介绍: ACS Materials Letters is a journal that publishes high-quality and urgent papers at the forefront of fundamental and applied research in the field of materials science. It aims to bridge the gap between materials and other disciplines such as chemistry, engineering, and biology. The journal encourages multidisciplinary and innovative research that addresses global challenges. Papers submitted to ACS Materials Letters should clearly demonstrate the need for rapid disclosure of key results. The journal is interested in various areas including the design, synthesis, characterization, and evaluation of emerging materials, understanding the relationships between structure, property, and performance, as well as developing materials for applications in energy, environment, biomedical, electronics, and catalysis. The journal has a 2-year impact factor of 11.4 and is dedicated to publishing transformative materials research with fast processing times. The editors and staff of ACS Materials Letters actively participate in major scientific conferences and engage closely with readers and authors. The journal also maintains an active presence on social media to provide authors with greater visibility.
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