Molecular Beam Epitaxy of Al-Polar Wurtzite AlN(0001) on β-Ga2O3(-201) Substrates

IF 9.6 1区 化学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Andy Seguret, Hanako Okuno, Hervé Roussel, Jean-Luc Rouvière, Anna Bujak, Philippe Ferrandis, Edith Bellet-Amalric, Vincent Consonni and Eva Monroy*, 
{"title":"Molecular Beam Epitaxy of Al-Polar Wurtzite AlN(0001) on β-Ga2O3(-201) Substrates","authors":"Andy Seguret,&nbsp;Hanako Okuno,&nbsp;Hervé Roussel,&nbsp;Jean-Luc Rouvière,&nbsp;Anna Bujak,&nbsp;Philippe Ferrandis,&nbsp;Edith Bellet-Amalric,&nbsp;Vincent Consonni and Eva Monroy*,&nbsp;","doi":"10.1021/acsmaterialslett.4c0247910.1021/acsmaterialslett.4c02479","DOIUrl":null,"url":null,"abstract":"<p >This study explores the challenging heteroepitaxial growth of wurtzite AlN on monoclinic β-Ga<sub>2</sub>O<sub>3</sub>(-201) using plasma-assisted molecular beam epitaxy. By optimizing various nucleation and growth conditions, particularly the Al/N flux ratio, we achieve optimal surface morphology and structural quality. Substrate nitridation growth under N-rich conditions is found to favor the formation of smooth AlN with a sharp nitride/oxide heterointerface, whereas Al-rich conditions lead to the formation of rougher AlN textured along the &lt;0001&gt; direction but with highly twisted grains. Comprehensive structural analyses show the growth of a high-quality AlN(0001) layer with a homogeneous Al polarity on β-Ga<sub>2</sub>O<sub>3</sub>(-201), exhibiting an epitaxial relationship of AlN[2-1-10] // β-Ga<sub>2</sub>O<sub>3</sub>[020]. The present findings, supported by theoretical calculations reporting the formation of a two-dimensional electron gas with a charge interface density higher than 10<sup>13</sup> cm<sup>–2</sup>, open important perspectives for the development of next generation power electronic devices made of ultrawide band gap semiconductors.</p>","PeriodicalId":19,"journal":{"name":"ACS Materials Letters","volume":"7 2","pages":"660–667 660–667"},"PeriodicalIF":9.6000,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Materials Letters","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsmaterialslett.4c02479","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

This study explores the challenging heteroepitaxial growth of wurtzite AlN on monoclinic β-Ga2O3(-201) using plasma-assisted molecular beam epitaxy. By optimizing various nucleation and growth conditions, particularly the Al/N flux ratio, we achieve optimal surface morphology and structural quality. Substrate nitridation growth under N-rich conditions is found to favor the formation of smooth AlN with a sharp nitride/oxide heterointerface, whereas Al-rich conditions lead to the formation of rougher AlN textured along the <0001> direction but with highly twisted grains. Comprehensive structural analyses show the growth of a high-quality AlN(0001) layer with a homogeneous Al polarity on β-Ga2O3(-201), exhibiting an epitaxial relationship of AlN[2-1-10] // β-Ga2O3[020]. The present findings, supported by theoretical calculations reporting the formation of a two-dimensional electron gas with a charge interface density higher than 1013 cm–2, open important perspectives for the development of next generation power electronic devices made of ultrawide band gap semiconductors.

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来源期刊
ACS Materials Letters
ACS Materials Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
14.60
自引率
3.50%
发文量
261
期刊介绍: ACS Materials Letters is a journal that publishes high-quality and urgent papers at the forefront of fundamental and applied research in the field of materials science. It aims to bridge the gap between materials and other disciplines such as chemistry, engineering, and biology. The journal encourages multidisciplinary and innovative research that addresses global challenges. Papers submitted to ACS Materials Letters should clearly demonstrate the need for rapid disclosure of key results. The journal is interested in various areas including the design, synthesis, characterization, and evaluation of emerging materials, understanding the relationships between structure, property, and performance, as well as developing materials for applications in energy, environment, biomedical, electronics, and catalysis. The journal has a 2-year impact factor of 11.4 and is dedicated to publishing transformative materials research with fast processing times. The editors and staff of ACS Materials Letters actively participate in major scientific conferences and engage closely with readers and authors. The journal also maintains an active presence on social media to provide authors with greater visibility.
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