Structure and stability of copper nanoclusters on monolayer tungsten dichalcogenides

IF 3.5 3区 化学 Q2 CHEMISTRY, INORGANIC & NUCLEAR
Michael Sweetman, Cara-Lena Nies, Michael Nolan
{"title":"Structure and stability of copper nanoclusters on monolayer tungsten dichalcogenides","authors":"Michael Sweetman, Cara-Lena Nies, Michael Nolan","doi":"10.1039/d4dt02985b","DOIUrl":null,"url":null,"abstract":"Layered materials, such as tungsten dichalcogenides (TMDs), are being studied for a wide range of applications, due to their unique and varied properties. Specifically, their use as either a support for low dimensional catalysts or as an ultrathin diffusion barrier in semiconductor devices interconnect structures are particularly relevant. In order to fully realise these possible applications for TMDs, understanding the interaction between metals and the monolayer they are deposited on is of utmost importance. The morphology that arises due to given metal–substrate combinations determines their possible applications and thus is a central characteristic. Previous theoretical studies typically focus on the effects which single metal adatoms, or dopants, have on a TMDs’ electronic and optical properties, thereby leaving a knowledge gap in terms of thin film nucleation on TMD monolayers. To address this, we present a density functional theory (DFT) study of the adsorption of small Cu clusters on a range of TMD monolayers, namely WS<small><sub>2</sub></small>, WSe<small><sub>2</sub></small>, and WTe<small><sub>2</sub></small>. We explore how metal–substrate and metal–metal interactions contribute to both the stability of these Cu clusters and their morphology, and investigate the role of the chalcogen in these interactions. We find that single Cu atoms adsorb most strongly to the adsorption site above the W atom, however as nanocluster size increases, Cu tends to be adsorbed atop the chalcogen atoms in the monolayer to facilitate Cu–Cu bond formation. We show that Cu–Cu interactions drive the stability of the adsorbed Cu nanoclusters, with a clear preference for 3D structures on all 3 monolayers studied. Furthermore, significant Cu migration occurs during 0 K relaxation. This, combined with the small activation barriers found for Cu migration suggest facile and dynamic cluster behaviour at finite temperature on all three monolayers. Finally, we find that Cu clusters are generally most stable on WTe<small><sub>2</sub></small> and least stable on WSe<small><sub>2</sub></small>. This difference however is typically only in the range of 0.1 eV.","PeriodicalId":71,"journal":{"name":"Dalton Transactions","volume":"53 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Dalton Transactions","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1039/d4dt02985b","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0

Abstract

Layered materials, such as tungsten dichalcogenides (TMDs), are being studied for a wide range of applications, due to their unique and varied properties. Specifically, their use as either a support for low dimensional catalysts or as an ultrathin diffusion barrier in semiconductor devices interconnect structures are particularly relevant. In order to fully realise these possible applications for TMDs, understanding the interaction between metals and the monolayer they are deposited on is of utmost importance. The morphology that arises due to given metal–substrate combinations determines their possible applications and thus is a central characteristic. Previous theoretical studies typically focus on the effects which single metal adatoms, or dopants, have on a TMDs’ electronic and optical properties, thereby leaving a knowledge gap in terms of thin film nucleation on TMD monolayers. To address this, we present a density functional theory (DFT) study of the adsorption of small Cu clusters on a range of TMD monolayers, namely WS2, WSe2, and WTe2. We explore how metal–substrate and metal–metal interactions contribute to both the stability of these Cu clusters and their morphology, and investigate the role of the chalcogen in these interactions. We find that single Cu atoms adsorb most strongly to the adsorption site above the W atom, however as nanocluster size increases, Cu tends to be adsorbed atop the chalcogen atoms in the monolayer to facilitate Cu–Cu bond formation. We show that Cu–Cu interactions drive the stability of the adsorbed Cu nanoclusters, with a clear preference for 3D structures on all 3 monolayers studied. Furthermore, significant Cu migration occurs during 0 K relaxation. This, combined with the small activation barriers found for Cu migration suggest facile and dynamic cluster behaviour at finite temperature on all three monolayers. Finally, we find that Cu clusters are generally most stable on WTe2 and least stable on WSe2. This difference however is typically only in the range of 0.1 eV.

Abstract Image

求助全文
约1分钟内获得全文 求助全文
来源期刊
Dalton Transactions
Dalton Transactions 化学-无机化学与核化学
CiteScore
6.60
自引率
7.50%
发文量
1832
审稿时长
1.5 months
期刊介绍: Dalton Transactions is a journal for all areas of inorganic chemistry, which encompasses the organometallic, bioinorganic and materials chemistry of the elements, with applications including synthesis, catalysis, energy conversion/storage, electrical devices and medicine. Dalton Transactions welcomes high-quality, original submissions in all of these areas and more, where the advancement of knowledge in inorganic chemistry is significant.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信