SN2-Reaction-Driven Bonding-Heterointerface Strengthens Buried Adhesion and Orientation for Advanced Perovskite Solar Cells

Abstract

Traditionally weak buried interaction without customized chemical bonding always goes against the formation of high-quality perovskite film that highly determines the efficiency and stability of perovskite solar cells. To address this issue, herein, we propose a bimolecular nucleophilic substitution reaction (SN2) driving strategy to idealize the robust buried interface by simultaneously decorating underlying substrate and functionalizing [PbX6]4- octahedral framework with iodoacetamide and thiol molecules, respectively. Theoretical and experimental results demonstrate that a strong SN2 reaction between exposed halogen and thiol group in two molecules occurs, which not only benefits the reinforcement of buried adhesion, but also triggers target-point-oriented crystallization, synergistically upgrading the upper perovskite film quality and accelerating interfacial charge extraction-transfer behavior. Benefiting from the suppressed nonradiative recombination, as a result, an all-air-processed carbon-based all-inorganic CsPbI2Br device achieves an enhanced efficiency of 15.14%, more importantly, with significantly prolonged long-term stability under harsh conditions. This unique reaction-driven buried interface provides a new path for manipulating perovskite growth and obtaining advanced perovskite photovoltaics.