Single-X-Ray Sensitive Energy-Binning Dosimeter for Closed-Loop Cancer External-Beam Radiotherapy

IF 4.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Rahul Lall;Kyoungtae Lee;Adam Cunha;Rebecca Abergel;Youngho Seo;Ali M. Niknejad;Mekhail Anwar
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引用次数: 0

Abstract

X-ray radiation dose delivered during cancer external-beam radiotherapy (EBRT) is nonlinear with the biological effect imparted to cancer cells and neighboring healthy tissues. This oftentimes leads to insufficient damage to cancer cells and excessive damage to the surrounding healthy tissues, both increasing toxicity and the risk of cancer recurrence later in life for many patients. An understanding of X-ray energy deposition at the single-X-ray level is, therefore, necessary to improve the efficacy of cancer radiotherapy. Here, we present a single-X-ray sensitive, energy-binning integrated circuit (IC)-based dosimeter, fabricated in 180 nm CMOS technology, to enable closed-loop cancer radiotherapy for personalized patient treatment. We use small $3{\times }3~{\mu }$ m reverse-biased deep n-well (DNWELL) diodes designed at low capacitive nodes ( ${C} {_{\mathrm {diode}}}$ ), such that the miniscule charge deposition ( ${Q} {_{\mathrm {dep}}}$ ) from single X-rays at these nodes generates a voltage signal large enough to be sensed ( ${V} {_{\mathrm {diode}}}{=}{Q} {_{\mathrm {dep}}}$ / ${C} {_{\mathrm {diode}}}$ ). In order to enable single-X-ray energy resolution without significant power and area, we implement an analog voltage supply (AVDDH) ~log resistor grid to create a sensitivity gradient across the $76{\times }55$ pixel array. The IC-based dosimeter was tested under scenarios consistent with the treatment of shallow lesions (e.g., skin cancer, superficial tumors, intraoperative radiotherapy). The system is highly linear with radiation dose (10–250 cGy) and accurately tracks dose up to 2 cm deep in tissue for 50-, 70-, and 100-kV X-ray beams.
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来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
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