HfO2-based ferroelectric synaptic devices: challenges and engineering solutions

IF 4.2 2区化学 Q2 CHEMISTRY, MULTIDISCIPLINARY

Chemical Communications Pub Date : 2025-01-24 DOI:10.1039/d4cc05293e

Taegyu Kwon , Hyeong Seok Choi , Dong Hyun Lee , Dong Hee Han , Yong Hyeon Cho , Intak Jeon , Chang Hwa Jung , Hanjin Lim , Taehwan Moon , Min Hyuk Park

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引用次数: 0

Abstract

HfO₂-based ferroelectric memories have garnered significant attention for their potential to serve as artificial synaptic devices owing to their scalability and CMOS compatibility. This review examines the key material properties and challenges associated with HfO₂-based ferroelectric artificial synaptic devices as well as the recent advancements in engineering strategies to improve their synaptic performance. The fundamental physics and material properties of HfO₂-based ferroelectrics are reviewed to understand the theoretical origin of the aforementioned technical issues in ferroelectric HfO₂-based synaptic devices. Based on the understanding, strategies to resolve the various technical issues from the device to array level are discussed, along with reviewing important progresses in recent studies. Based on these recent technical advancements, new perspectives to achieve high performance and highly reliable HfO₂-based ferroelectric synaptic devices and their array are provided.

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基于hfo2的铁电突触器件：挑战和工程解决方案。

基于hfo2的铁电存储器由于其可扩展性和CMOS兼容性而具有作为人工突触器件的潜力，因此引起了人们的广泛关注。本文综述了基于hfo2的铁电人工突触器件的关键材料特性和挑战，以及提高其突触性能的工程策略的最新进展。本文综述了基于hfo2的铁电体的基本物理和材料性质，以了解上述技术问题在基于hfo2的铁电突触器件中的理论起源。在此基础上，讨论了从器件到阵列层面解决各种技术问题的策略，并回顾了近年来的重要研究进展。基于这些最新的技术进展，为实现高性能和高可靠性的hfo2基铁电突触器件及其阵列提供了新的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Chemical Communications 化学-化学综合

CiteScore

8.60

自引率

4.10%

发文量

2705

审稿时长

1.4 months

期刊介绍： ChemComm (Chemical Communications) is renowned as the fastest publisher of articles providing information on new avenues of research, drawn from all the world''s major areas of chemical research.