Seojin Cho, Geonhui Han, Chuljun Lee, Jiyong Woo, Daeseok Lee
{"title":"Interface effect based nano-scale TiO<sub>x</sub>vertical synapse device for high-density integration in neuromorphic computing system.","authors":"Seojin Cho, Geonhui Han, Chuljun Lee, Jiyong Woo, Daeseok Lee","doi":"10.1088/1361-6528/adad78","DOIUrl":null,"url":null,"abstract":"<p><p>To implement a neuromorphic computing system capable of efficiently processing vast amounts of unstructured data, a significant number of synapse and neuron devices are needed, resulting in increased area demands. Therefore, we developed a nanoscale vertically structured synapse device that supports high-density integration. To realize this synapse device, the interface effects between the resistive switching layer and the electrode were investigated and utilized. Electrical and physical analyses were conducted to comprehend the operational mechanism of the developed synapse device. The results indicate that oxygen ions from the resistive switching layer were absorbed by the electrode, forming metal-oxygen bonds. The V<sub>o</sub>concentration in the switching layer that can change the total conductance of the device. To assess its potential as a synapse device in the neuromorphic system, the developed device was evaluated through pattern recognition simulation.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/adad78","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
To implement a neuromorphic computing system capable of efficiently processing vast amounts of unstructured data, a significant number of synapse and neuron devices are needed, resulting in increased area demands. Therefore, we developed a nanoscale vertically structured synapse device that supports high-density integration. To realize this synapse device, the interface effects between the resistive switching layer and the electrode were investigated and utilized. Electrical and physical analyses were conducted to comprehend the operational mechanism of the developed synapse device. The results indicate that oxygen ions from the resistive switching layer were absorbed by the electrode, forming metal-oxygen bonds. The Voconcentration in the switching layer that can change the total conductance of the device. To assess its potential as a synapse device in the neuromorphic system, the developed device was evaluated through pattern recognition simulation.
期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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