Grain-Boundary Corrosion in UO2+δ from a Defect Chemical Perspective: A Case Study of the Σ5(310)[001] Grain Boundary

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Matthew J. Wolf, Adrian L. Usler, Roger A. De Souza
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Abstract

We combine atomistic and continuum simulation methods to study the defect chemistry of a model grain boundary in UO2+δ. Using atomistic methods, we calculate the formation energies of oxygen interstitials, uranium vacancies, and hole polarons (U5+ ions) across the Σ5(310)[001] symmetric tilt grain boundary. This information is then used as input in a continuum model of point-defect concentrations at the grain boundary and in its vicinity, taking into account electrostatic (space-charge) effects. Two scenarios are modeled: one in which oxygen interstitials are the majority ionic defect and one in which uranium vacancies are the majority ionic defect, with bulk charge neutrality being maintained by hole polarons in both cases. Our results indicate that, irrespective of the majority ionic defect, the Σ5(310)[001] grain boundary in UO2+δ is negatively charged, with positively charged adjacent space-charge zones in which the hole-polaron concentration is enhanced. We propose that the enhanced U5+ concentration at the grain boundary and within the space-charge zones renders grain-boundary regions more susceptible to oxidative corrosion, an effect that could be counteracted by acceptor doping.

Abstract Image

缺陷化学视角下UO2+δ的晶界腐蚀:以Σ5(310)[001]晶界为例
本文采用原子模拟和连续介质模拟相结合的方法研究了UO2+δ中模型晶界的缺陷化学性质。利用原子学方法,我们计算了Σ5(310)[001]对称倾斜晶界上氧间隙、铀空位和空穴极化子(U5+离子)的形成能。然后,考虑到静电(空间电荷)效应,将该信息用作晶界及其附近点缺陷浓度的连续模型的输入。模拟了两种情况:一种是氧间隙是主要的离子缺陷,另一种是铀空位是主要的离子缺陷,两种情况下都由空穴极化子维持体电荷中性。我们的研究结果表明,不考虑大多数离子缺陷,UO2+δ中Σ5(310)[001]晶界带负电,而相邻的空间电荷区带正电,其中空穴极化子浓度增强。我们提出,晶界和空间电荷区U5+浓度的增强使晶界区域更容易受到氧化腐蚀,这种影响可以通过受体掺杂来抵消。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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