High-Performance Edge-Contact Monolayer Molybdenum Disulfide Transistors.

IF 11 1区综合性期刊 Q1 Multidisciplinary

Research Pub Date : 2025-01-17 eCollection Date: 2025-01-01 DOI:10.34133/research.0593

Jiankun Xiao, Xiong Xiong, Xinhang Shi, Shiyuan Liu, Shenwu Zhu, Yue Zhang, Ru Huang, Yanqing Wu

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Abstract

Edge contact is essential for achieving the ultimate device pitch scaling of stacked nanosheet transistors with monolayer 2-dimensional (2D) channels. However, due to large edge-contact resistance between 2D channels and contact metal, there is currently a lack of high-performance edge-contact device technology for 2D material channels. Here, we report high-performance edge-contact monolayer molybdenum disulfide (MoS₂) field-effect transistors (FETs) utilizing well-controlled plasma etching techniques. Plasma etching with pure argon improves the edge dangling bonds and thus improves the edge-contact quality. Edge-contact monolayer MoS₂ FET shows good ohmic contact even at cryogenic temperatures (20 K), achieving a record-low contact resistance (R _c) of 1.25 kΩ·μm among all edge-contact MoS₂ devices. The record-high on-state current of 436 μA/μm and transconductance of 123 μS/μm at V _ds = 1 V are achieved on an edge-contact monolayer MoS₂ FET with L _ch = 120 nm. This work highlights the great potential of edge contacts for high-performance monolayer transition metal dichalcogenide (TMD) material electronics.

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高性能边缘接触单层二硫化钼晶体管。

边缘接触对于实现具有单层二维通道的堆叠纳米片晶体管的最终器件间距缩放至关重要。然而，由于二维通道与接触金属之间存在较大的边接触电阻，目前缺乏用于二维材料通道的高性能边接触器件技术。在这里，我们报告了高性能的边缘接触单层二硫化钼（MoS2）场效应晶体管（fet）利用良好控制的等离子体蚀刻技术。纯氩等离子体刻蚀改善了边缘悬垂键，从而改善了边缘接触质量。在低温（20 K）条件下，单层MoS2 FET也表现出良好的欧姆接触性，在所有MoS2器件中，接触电阻R c达到了创纪录的1.25 kΩ·μm。在lch = 120 nm的边缘接触MoS2单层场效应管上，获得了436 μA/μm的高导通电流和123 μS/μm的跨导率。这项工作强调了边缘接触在高性能单层过渡金属二硫化物（TMD）材料电子学中的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Research Multidisciplinary-Multidisciplinary

CiteScore

13.40

自引率

3.60%

发文量

审稿时长

14 weeks

期刊介绍： Research serves as a global platform for academic exchange, collaboration, and technological advancements. This journal welcomes high-quality research contributions from any domain, with open arms to authors from around the globe. Comprising fundamental research in the life and physical sciences, Research also highlights significant findings and issues in engineering and applied science. The journal proudly features original research articles, reviews, perspectives, and editorials, fostering a diverse and dynamic scholarly environment.