Plasmon effect on the P3HT: ICxA NPs active layer performance

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-01-22 DOI:10.1007/s11082-024-07936-w

Hussein Abdul Kareem, Mohammed F. Al-Mudhaffer

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Abstract

This study investigates the optical and electrical properties of pure and doped P3HT: ICxA nanoparticles (NPs) with silver (Ag), cobalt (Co), and zinc (Zn), using an optical transfer matrix method (TMM) and a 1D drift–diffusion model in SCAPS for electrical analysis. Modeled current density and quantum efficiency (QE) simulation results were compared with experimental data for a standard P3HT: PCBM donor–acceptor system under 1 sun illumination. Dynamic light scattering (DLS) measurements indicated nanoparticle sizes around 50 nm, consistent with field emission scanning electron microscopy (FESEM) images. Photoluminescence (PL) analysis revealed that P3HT: ICxA-Ag NPs exhibited the lowest charge dissociation, confirming enhanced charge generation and longer carrier lifetimes than Co-, Zn-doped, and pure samples. Optical modeling calculated the current densities for pure, Ag-, Co-, and Zn-doped devices as 6.648, 13.781, 11.819, and 9.160 mA/cm², respectively, assuming ideal device conditions with 100% internal quantum efficiency (IQE). These values were higher than SCAPS-simulated results, which reflected real device performance, exhibiting lower efficiency (0.472%) and a short-circuit current (Jsc) of 2.752 mA/cm². The findings suggest that doping with Ag and Co significantly enhances charge generation and electrical properties, improving device performance.

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等离子体效应对P3HT: ICxA NPs有源层性能的影响

本研究利用光学传递矩阵法（TMM）和一维漂移扩散模型在SCAPS中进行电学分析，研究了含银（Ag）、钴（Co）和锌（Zn）的纯和掺杂P3HT: ICxA纳米粒子（NPs）的光学和电学性质。将模拟的电流密度和量子效率（QE）模拟结果与标准P3HT: PCBM供体-受体系统在1个太阳光照下的实验数据进行了比较。动态光散射（DLS）测量表明纳米颗粒尺寸约为50 nm，与场发射扫描电子显微镜（FESEM）图像一致。光致发光（PL）分析显示，P3HT: ICxA-Ag NPs的电荷解离最低，证实了与Co、zn掺杂和纯样品相比，P3HT: ICxA-Ag NPs的电荷生成增强，载流子寿命更长。光学建模计算出纯、Ag、Co和zn掺杂器件的电流密度分别为6.648、13.781、11.819和9.160 mA/cm2，假设器件条件为100%内量子效率（IQE）。这些值高于scaps模拟结果，反映了真实器件的性能，效率较低（0.472%），短路电流（Jsc）为2.752 mA/cm2。研究结果表明，Ag和Co的掺杂显著增强了电荷的产生和电学性能，提高了器件的性能。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.